Liu Xingen, Pyatakov Alexander P, Ren Wei
Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, and International Center of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
Materials Genome Institute, and State Key Laboratory of Advanced Special Steel, Shanghai University, Shanghai 200444, China.
Phys Rev Lett. 2020 Dec 11;125(24):247601. doi: 10.1103/PhysRevLett.125.247601.
Based on the first-principles prediction, we report the magnetoelectric coupling effect in two-dimensional multiferroic bilayer VS_{2}. The ground-state 3R-type stacking breaks space inversion symmetry, therefore introducing a spontaneous polarization perpendicular to the layer plane. We further reveal that the out-of-plane ferroelectric polarization of bilayer VS_{2} can be reversed upon interlayer sliding of an in-plane translation. Each VS_{2} layer has a ferromagnetic state with an opposite magnetic moment between two antiferromagnetically ordered layers. We found that ferroelectricity and antiferromagnetism can be coupled together by a ferrovalley in bilayer VS_{2} to realize electronic control of magnetism. Remarkably, a net magnetic moment is generated by reducing the interlayer distance, and an electric field is able to achieve linear and second-order nonlinear magnetoelectric coupling in bilayer VS_{2}.
基于第一性原理预测，我们报道了二维多铁双层VS₂中的磁电耦合效应。基态3R型堆叠打破了空间反演对称性，从而引入了垂直于层平面的自发极化。我们进一步揭示，双层VS₂的面外铁电极化可在面内平移的层间滑动时反转。每个VS₂层都具有铁磁态，在两个反铁磁有序层之间具有相反的磁矩。我们发现，双层VS₂中的铁电和反铁磁可以通过铁谷耦合在一起，以实现对磁性的电子控制。值得注意的是，通过减小层间距离会产生净磁矩，并且电场能够在双层VS₂中实现线性和二阶非线性磁电耦合。
