Agarwal Pankaj B, Thakur Navneet Kumar, Sharma Rishi, Singh Parul, Joseph Joshy, Tripura Chaturvedula
Smart Sensors Area, CSIR-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, 333031, India.
Academy for Scientific and Innovative Research (AcSIR), Ghaziabad, Uttar Pradesh, 201002, India.
Sci Rep. 2021 Feb 17;11(1):3979. doi: 10.1038/s41598-021-83451-2.
Biosensors based on liquid-gated carbon nanotubes field-effect transistors (LG-CNTFETs) have attracted considerable attention, as they offer high sensitivity and selectivity; quick response and label-free detection. However, their practical applications are limited due to the numerous fabrication challenges including resist-based lithography, in which after the lithography process, the resist leaves trace level contaminations over the CNTs that affect the performance of the fabricated biosensors. Here, we report the realization of LG-CNTFET devices using silicon shadow mask-based chemical-free lithography process on a 3-in. silicon wafer, yielding 21 sensor chips. Each sensor chip consists of 3 × 3 array of LG-CNTFET devices. Field emission scanning electron microscope (FESEM) and Raman mapping confirm the isolation of devices within the array chip having 9 individual devices. A reference electrode (Ag/AgCl) is used to demonstrate the uniformity of sensing performances among the fabricated LG-CNTFET devices in an array using different KCl molar solutions. The average threshold voltage (V) for all 9 devices varies from 0.46 to 0.19 V for 0.1 mM to 1 M KCl concentration range. This developed chemical-free process of LG-CNTFET array fabrication is simple, inexpensive, rapid having a commercial scope and thus opens a new realm of scalable realization of various biosensors.
基于液栅碳纳米管场效应晶体管(LG-CNTFET)的生物传感器因其具有高灵敏度和选择性、快速响应以及无需标记检测等优点而备受关注。然而,由于存在诸多制造挑战,包括基于光刻胶的光刻技术,在光刻过程之后,光刻胶会在碳纳米管上留下痕量污染物,从而影响所制造生物传感器的性能,其实际应用受到限制。在此,我们报告了在3英寸硅片上使用基于硅阴影掩膜的无化学光刻工艺实现LG-CNTFET器件,共得到21个传感器芯片。每个传感器芯片由3×3阵列的LG-CNTFET器件组成。场发射扫描电子显微镜(FESEM)和拉曼映射证实了阵列芯片内具有9个独立器件的器件隔离情况。使用参比电极(Ag/AgCl)来证明在使用不同KCl摩尔溶液的阵列中所制造的LG-CNTFET器件之间传感性能的均匀性。对于0.1 mM至1 M KCl浓度范围,所有9个器件的平均阈值电压(V)从0.46 V变化到0.19 V。这种所开发的LG-CNTFET阵列制造的无化学工艺简单、廉价、快速且具有商业应用前景,从而为各种生物传感器的可扩展实现开辟了一个新领域。