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具有全覆盖表面的单壁碳纳米管阵列,可实现高性能电子学。

Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics.

机构信息

IBM T. J. Watson Research Centre, Yorktown Heights, New York 10598, USA.

出版信息

Nat Nanotechnol. 2013 Mar;8(3):180-6. doi: 10.1038/nnano.2012.257. Epub 2013 Jan 27.

Abstract

Single-walled carbon nanotubes have exceptional electronic properties and have been proposed as a replacement for silicon in applications such as low-cost thin-film transistors and high-performance logic devices. However, practical devices will require dense, aligned arrays of electronically pure nanotubes to optimize performance, maximize device packing density and provide sufficient drive current (or power output) for each transistor. Here, we show that aligned arrays of semiconducting carbon nanotubes can be assembled using the Langmuir-Schaefer method. The arrays have a semiconducting nanotube purity of 99% and can fully cover a surface with a nanotube density of more than 500 tubes/µm. The nanotube pitch is self-limited by the diameter of the nanotube plus the van der Waals separation, and the intrinsic mobility of the nanotubes is preserved after array assembly. Transistors fabricated using this approach exhibit significant device performance characteristics with a drive current density of more than 120 µA µm(-1), transconductance greater than 40 µS µm(-1) and on/off ratios of ∼1 × 10(3).

摘要

单壁碳纳米管具有优异的电子性能,被提议用于替代硅,例如在低成本薄膜晶体管和高性能逻辑器件等应用中。然而,实际器件将需要密集、排列整齐的电子纯纳米管阵列,以优化性能、最大化器件封装密度,并为每个晶体管提供足够的驱动电流(或功率输出)。在这里,我们展示了使用 Langmuir-Schaefer 方法可以组装排列整齐的半导体碳纳米管阵列。该阵列的半导体纳米管纯度为 99%,可以完全覆盖表面,纳米管密度超过 500 根/µm。纳米管的间距由纳米管的直径和范德华分离决定,并且在阵列组装后保持纳米管的固有迁移率。使用这种方法制造的晶体管具有显著的器件性能特征,驱动电流密度超过 120µAµm(-1),跨导大于 40µSµm(-1),开关比约为 1×10(3)。

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