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用于在单层石墨烯中制备高密度CO和O筛分纳米孔的毫秒级晶格气化

Millisecond lattice gasification for high-density CO- and O-sieving nanopores in single-layer graphene.

作者信息

Huang Shiqi, Li Shaoxian, Villalobos Luis Francisco, Dakhchoune Mostapha, Micari Marina, Babu Deepu J, Vahdat Mohammad Tohidi, Mensi Mounir, Oveisi Emad, Agrawal Kumar Varoon

机构信息

Laboratory of Advanced Separations (LAS), École Polytechnique Fédérale de Lausanne (EPFL), 1950 Sion, Switzerland.

Institut des Sciences et Ingénierie Chimiques (ISIC), EPFL, 1950 Sion, Switzerland.

出版信息

Sci Adv. 2021 Feb 24;7(9). doi: 10.1126/sciadv.abf0116. Print 2021 Feb.

DOI:10.1126/sciadv.abf0116
PMID:33627433
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7904253/
Abstract

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO from N However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>10 cm) of functional oxygen clusters that then evolve in CO-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O atmosphere. Large CO and O permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO/N and O/N selectivities.

摘要

将单层石墨烯进行蚀刻以纳入具有亚埃精度的高孔隙密度,从而实现分子层面的区分,这对于实现有望实现的类似尺寸气体分子(如从氮气中分离一氧化碳)的高通量分离至关重要。然而,要实现高孔隙密度所需的快速蚀刻动力学,要达到这种精度是具有挑战性的。在此,我们报告了一种毫秒级的碳气化化学过程,其中包含高密度(>10个/cm)的功能性氧簇,这些氧簇随后在可控且可预测的气化条件下演变成用于筛分一氧化碳的空位缺陷。观察到纳米孔晶格异构体的统计分布,这与异构体编目问题的理论解决方案高度吻合。该气化技术具有可扩展性,并且展示了厘米级的膜。最后,通过在氧气气氛中原位扩展空位缺陷,分子截留值可以调整0.1埃。同时展示了高的一氧化碳和氧气渗透率(分别大于10000和1000 GPU)以及有吸引力的一氧化碳/氮气和氧气/氮气选择性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5dec/7904253/092244e24f97/abf0116-F2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5dec/7904253/978620f0c756/abf0116-F1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5dec/7904253/092244e24f97/abf0116-F2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5dec/7904253/978620f0c756/abf0116-F1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5dec/7904253/092244e24f97/abf0116-F2.jpg

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