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中红外多层薄膜的内应力预测与测量

Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films.

作者信息

Tien Chuen-Lin, Chen Kuan-Po, Lin Hong-Yi

机构信息

Department of Electrical Engineering, Feng Chia University, Taichung 40724, Taiwan.

Ph. D. Program of Electrical and Communications Engineering, Feng Chia University, Taichung 40724, Taiwan.

出版信息

Materials (Basel). 2021 Feb 26;14(5):1101. doi: 10.3390/ma14051101.

DOI:10.3390/ma14051101
PMID:33652932
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7956535/
Abstract

We present an experimental method for evaluating interfacial force per width and predicting internal stress in mid-infrared band-pass filters (MIR-BPF). The interfacial force per width between the two kinds of thin-film materials was obtained by experimental measurement values, and the residual stress of the multilayer thin films was predicted by the modified Ennos formula. A dual electron beam evaporation system combined with ion-assisted deposition was used to fabricate mid-infrared band-pass filters. The interfacial forces per width for Ge/SiO and SiO/Ge were 124.9 N/m and 127.6 N/m, respectively. The difference between the measured stress and predicted stress in the 23-layer MIR-BPF was below 0.059 GPa. The residual stresses of the four-layer film, as well as the 20-layer and 23-layer mid-infrared band-pass filter, were predicted by adding the interface stress to the modified Ennos formula. In the four-layer film, the difference between the predicted value and the measured stress of the HL (high-low refractive index) and LH (low-high refractive index) stacks were -0.384 GPa for (HL) and -0.436 GPa for (LH), respectively. The predicted stress and the measured stress of the 20-layer mid-infrared filter were -0.316 GPa and -0.250 GPa. The predicted stress and the measured stress of the 23-layer mid-infrared filter were -0.257 GPa and -0.198 GPa, respectively.

摘要

我们提出了一种用于评估中红外带通滤波器(MIR-BPF)中单位宽度界面力和预测内部应力的实验方法。通过实验测量值获得了两种薄膜材料之间的单位宽度界面力,并利用修正的恩诺斯公式预测了多层薄膜的残余应力。采用双电子束蒸发系统结合离子辅助沉积来制备中红外带通滤波器。Ge/SiO和SiO/Ge的单位宽度界面力分别为124.9 N/m和127.6 N/m。23层MIR-BPF中测量应力与预测应力之间的差异低于0.059 GPa。通过将界面应力添加到修正的恩诺斯公式中,预测了四层薄膜以及20层和23层中红外带通滤波器的残余应力。在四层薄膜中,HL(高低折射率)和LH(低高折射率)堆叠的预测值与测量应力之间的差异,对于(HL)为-0.384 GPa,对于(LH)为-0.436 GPa。20层中红外滤波器的预测应力和测量应力分别为-0.316 GPa和-0.250 GPa。23层中红外滤波器的预测应力和测量应力分别为-0.257 GPa和-0.198 GPa。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/846b9dc7da02/materials-14-01101-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/2203ab59a32c/materials-14-01101-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/bb9dd9f18ab1/materials-14-01101-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/fdc5f160deb4/materials-14-01101-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/769f98fa3148/materials-14-01101-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/ba6d5d099b9c/materials-14-01101-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/681616afef79/materials-14-01101-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/a78a9b4ac843/materials-14-01101-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/a8c8a14471b5/materials-14-01101-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/846b9dc7da02/materials-14-01101-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/2203ab59a32c/materials-14-01101-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/bb9dd9f18ab1/materials-14-01101-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/fdc5f160deb4/materials-14-01101-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/769f98fa3148/materials-14-01101-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/ba6d5d099b9c/materials-14-01101-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/681616afef79/materials-14-01101-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/a78a9b4ac843/materials-14-01101-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/a8c8a14471b5/materials-14-01101-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fb60/7956535/846b9dc7da02/materials-14-01101-g009.jpg

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