Zemek Josef, Jiricek Petr, Houdkova Jana, Ledinsky Martin, Jelinek Miroslav, Kocourek Tomas
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Faculty of Biomedical Engineering, Czech Technical University in Prague, nam. Sitna 3105, 27201 Kladno, Czech Republic.
Nanomaterials (Basel). 2021 Feb 25;11(3):567. doi: 10.3390/nano11030567.
This work attempts to understand the behaviour of Ge-induced cytotoxicity of germanium-doped hydrogen-free diamond-like carbon (DLC) films recently thoroughly studied and published by Jelinek et al. At a low doping level, the films showed no cytotoxicity, while at a higher doping level, the films were found to exhibit medium to high cytotoxicity. We demonstrate, using surface-sensitive methods-two-angle X-ray-induced core-level photoelectron spectroscopy (ARXPS) and Low Energy Ion Scattering (LEIS) spectroscopy, that at a low doping level, the layers are capped by a carbon film which impedes the contact of Ge species with tissue. For higher Ge content in the DLC films, oxidized Ge species are located at the top surface of the layers, provoking cytotoxicity. The present results indicate no threshold for Ge concentration in cell culture substrate to avoid a severe toxic reaction.
这项工作试图理解由耶利内克等人最近深入研究并发表的掺锗无氢类金刚石碳（DLC）薄膜中锗诱导的细胞毒性行为。在低掺杂水平下，薄膜没有显示出细胞毒性，而在较高掺杂水平下，发现薄膜表现出中等到高的细胞毒性。我们使用表面敏感方法——双角X射线诱导的芯能级光电子能谱（ARXPS）和低能离子散射（LEIS）光谱证明，在低掺杂水平下，这些层被碳膜覆盖，这阻碍了锗物种与组织的接触。对于DLC薄膜中较高的锗含量，氧化的锗物种位于层的顶表面，引发细胞毒性。目前的结果表明，在细胞培养基质中不存在避免严重毒性反应的锗浓度阈值。
