Jelinek Miroslav, Kocourek Tomáš, Jurek Karel, Jelinek Michal, Smolková Barbora, Uzhytchak Mariia, Lunov Oleg
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Faculty of Biomedical Engineering, Czech Technical University in Prague, nam. Sitna 3105, 27 201 Kladno, Czech Republic.
Nanomaterials (Basel). 2019 Mar 18;9(3):451. doi: 10.3390/nano9030451.
This paper deals with the synthesis and study of the properties of germanium-doped diamond-like carbon (DLC) films. For deposition of doped DLC films, hybrid laser technology was used. Using two deposition lasers, it was possible to arrange the dopant concentrations by varying the laser repetition rate. Doped films of Ge concentrations from 0 at.% to 12 at.% were prepared on Si (100) and fused silica (FS) substrates at room temperature. Film properties, such as growth rate, roughness, scanning electron microscopy (SEM) morphology, wavelength dependent X-ray spectroscopy (WDS) composition, VIS-near infrared (IR) transmittance, and biological properties (cytotoxicity, effects on cellular morphology, and ability to produce reactive oxygen species (ROS)) were studied in relation to codeposition conditions and dopant concentrations. The analysis showed that Ge-DLC films exhibit cytotoxicity for higher Ge doping.
本文研究了掺锗类金刚石碳(DLC)薄膜的合成及其性能。对于掺杂DLC薄膜的沉积,采用了混合激光技术。使用两台沉积激光器,可以通过改变激光重复频率来调整掺杂剂浓度。在室温下,在硅(100)和熔融石英(FS)衬底上制备了锗浓度从0原子%到12原子%的掺杂薄膜。研究了薄膜性能,如生长速率、粗糙度、扫描电子显微镜(SEM)形貌、波长相关X射线光谱(WDS)成分、可见-近红外(IR)透过率以及生物学性能(细胞毒性、对细胞形态的影响和产生活性氧(ROS)的能力)与共沉积条件和掺杂剂浓度的关系。分析表明,对于较高的锗掺杂,锗掺杂DLC薄膜表现出细胞毒性。