Lee Hosang, Cho Kyoungah, Kim Sangsig
Department of Electrical Engineering, Korea University Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea.
J Nanosci Nanotechnol. 2021 Aug 1;21(8):4325-4329. doi: 10.1166/jnn.2021.19397.
In this study, we investigated the effect of electrode materials on the electrical characteristics of coplanar top-gate a-ITGZO thin-film transistors, in which the gate, source, and drain electrodes were made of the same metal, Ti or Al. The field-effect mobilities of the a-ITGZO thin-film transistors with Ti and Al electrodes were 35.2 and 20.1 cm²/V·s, respectively, and the threshold voltage of the a-ITGZO thin-film transistor with Ti electrodes was -0.4 V, whereas that of the transistor with Al electrodes was -1.8; this shift is attributed to the fact that Ti has a higher work function than Al. When Ti was used as the source and drain electrode material, the channel resistance and effective channel length were reduced owing to the penetration of metal atoms into the channel region from the edge of the source/drain electrodes.
在本研究中，我们研究了电极材料对共面顶栅非晶铟镓锌氧化物（a-ITGZO）薄膜晶体管电学特性的影响，其中栅极、源极和漏极均由相同金属钛（Ti）或铝（Al）制成。采用Ti和Al电极的a-ITGZO薄膜晶体管的场效应迁移率分别为35.2和20.1 cm²/V·s，采用Ti电极的a-ITGZO薄膜晶体管的阈值电压为-0.4 V，而采用Al电极的晶体管的阈值电压为-1.8 V；这种偏移归因于Ti的功函数高于Al这一事实。当Ti用作源极和漏极电极材料时，由于金属原子从源极/漏极电极边缘渗透到沟道区域，沟道电阻和有效沟道长度减小。
