Kang Mingu, Cho Kyoungah, Seol Minhyeok, Kim Sangsub, Kim Sangsig
Department of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea.
Display Research Center, Samsung Display, Samseong-ro 1, Giheung-gu, Yongin-si, Gyeonggi-do, 17113, Republic of Korea.
Heliyon. 2024 Jul 4;10(13):e34134. doi: 10.1016/j.heliyon.2024.e34134. eCollection 2024 Jul 15.
Here, we investigate the effects of interface defects on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs) utilizing bottom, top, and dual gatings. The field-effect mobility (27.3 cm/V∙s) and subthreshold swing (222 mV/decade) under a dual gating is substantially better than those under top (12.6 cm/V∙s, 301 mV/decade) and bottom (11.1 cm/V∙s, 487 mV/decade) gatings. For an a-ITGZO TFT, oxygen deficiencies are more prevalent in the bottom-gate dielectric interface than in the top-gate dielectric interface, and they are less prevalent inside the channel layer than at the interfaces, indicating that the presence of oxygen deficiencies significantly affects the field-effect mobility and subthreshold swing. Moreover, the variation in the electrical characteristics due to the positive bias stress is discussed here.
在此，我们研究了界面缺陷对采用底部、顶部和双栅极的非晶铟锡镓锌氧化物（a-ITGZO）薄膜晶体管（TFT）电学特性的影响。双栅极下的场效应迁移率（27.3 cm²/V∙s）和亚阈值摆幅（222 mV/十倍频程）明显优于顶部（12.6 cm²/V∙s，301 mV/十倍频程）和底部（11.1 cm²/V∙s，487 mV/十倍频程）栅极下的情况。对于a-ITGZO TFT，底部栅极介电界面处的氧缺陷比顶部栅极介电界面处更普遍，且在沟道层内部比在界面处更不普遍，这表明氧缺陷的存在显著影响场效应迁移率和亚阈值摆幅。此外，本文还讨论了由正偏压应力引起的电学特性变化。
