使用反射钝化层提高基于AlGaN的深紫外发光二极管的外部量子效率。

Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer.

作者信息

Lin Su-Hui, Tseng Ming-Chun, Peng Kang-Wei, Lai Shouqiang, Shen Meng-Chun, Horng Ray-Hua, Lien Shui-Yang, Wuu Dong-Sing, Kuo Hao-Chung, Wu Tingzhu, Chen Zhong

出版信息

Opt Express. 2021 Nov 8;29(23):37835-37844. doi: 10.1364/OE.441389.

DOI:10.1364/OE.441389

PMID:34808848

Abstract

In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO/SiO stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.

摘要

在本研究中，对具有反射钝化层（RPL）的深紫外发光二极管（DUV-LED）进行了研究。RPL由作为分布布拉格反射器的HfO/SiO堆栈组成，这些堆栈沉积在具有不同p-GaN厚度的两个DUV-LED上。RPL结构改善了具有厚和薄p-GaN的DUV-LED的外部量子效率下降，从而在500 mA注入电流下，其光输出功率分别提高了18.4%和39.4%，在1000 mA注入电流下分别提高了17.9%和37.9%。具有和不具有RPL的厚p-GaN的DUV-LED的效率下降分别为20.1%和19.1%，薄p-GaN的分别为18.0%和15.6%。具有RPL的DUV-LED表现出更好的性能。上述结果证明了RPL在DUV-LED应用中的发展潜力。