Shan Yi-Chia, Fang Wei, Chang Yang-Chyuan, Chang Wen-Dien, Wu Jih-Huah
Department of Biomechatronics Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Rd., Taipei 10617, Taiwan.
Department of Neurology, Min-Sheng General Hospital, No. 168, Jin-Kuo Rd., Taoyuan, Taoyuan County 330, Taiwan.
Evid Based Complement Alternat Med. 2021 Mar 5;2021:6693916. doi: 10.1155/2021/6693916. eCollection 2021.
In our previous study, the low-level laser (LLL) stimulation at the palm with a stimulation frequency of 10 Hz was able to induce significant brain activation in normal subjects. The electroencephalography (EEG) changes caused by the stimulation of light-emitting diode (LED) in normal subjects have not been investigated. This study aimed at identifying the effects of LED stimulation on the human brain using EEG analysis. Moreover, the dosage has been raised 4 times than that in the previous LLL study. The LED array stimulator (6 pcs LEDs, central wavelength 850 nm, output power 30 mW, and operating frequency 10 Hz) was used as the stimulation source. The LED stimulation was found to induce significant variation in alpha activity in the occipital, parietal, and temporal regions of the brain. Compared to the previous low-level laser study, LED has similar effects on EEG in alpha (8-12 Hz) activity. Theta (4-7 Hz) power significantly increased in the posterior head region of the brain. The effect lasted for at least 15 minutes after stimulation ceased. Conversely, beta (13-35 Hz) intensity in the right parietal area increased significantly, and a biphasic dose response has been observed in this study.
在我们之前的研究中，以10赫兹的刺激频率对手掌进行低强度激光（LLL）刺激，能够在正常受试者中诱导显著的大脑激活。正常受试者中由发光二极管（LED）刺激引起的脑电图（EEG）变化尚未得到研究。本研究旨在通过EEG分析确定LED刺激对人脑的影响。此外，剂量比之前的LLL研究提高了4倍。使用LED阵列刺激器（6个LED，中心波长850纳米，输出功率30毫瓦，工作频率10赫兹）作为刺激源。发现LED刺激会在大脑枕叶、顶叶和颞叶区域的α活动中引起显著变化。与之前的低强度激光研究相比，LED对脑电图α（8 - 12赫兹）活动有类似影响。大脑后头部区域的θ（4 - 7赫兹）功率显著增加。刺激停止后，这种效应至少持续15分钟。相反，右侧顶叶区域的β（13 - 35赫兹）强度显著增加，并且在本研究中观察到了双相剂量反应。
