2Department of Neurosurgery, University of Cincinnati College of Medicine; and.
3Division of Pediatric Neurosurgery, Cincinnati Children's Hospital Medical Center, Cincinnati, Ohio.
J Neurosurg Pediatr. 2021 Mar 26;27(6):629-636. doi: 10.3171/2020.10.PEDS20727. Print 2021 Jun 1.
External magnetic forces can have an impact on programmable valve mechanisms and potentially alter the opening pressure. As wearable technology has begun to permeate mainstream living, there is a clear need to provide information regarding safety of these devices for use near a programmable valve (PV). The aim of this study was to evaluate the magnetic fields of reference devices using smartphone-integrated magnetometers and compare the results with published shunt tolerances.
Five smartphones from different manufacturers were used to evaluate the magnetic properties of various commonly used (n = 6) and newer-generation (n = 10) devices using measurements generated from the internal smartphone magnetometers. PV tolerance testing using calibrated magnets of varying field strengths was also performed by smartphone magnetometers.
All tested smartphone-integrated magnetometers had a factory sensor saturation point at around 5000 µT or 50 Gauss (G). This is well below the threshold at which a magnet can potentially deprogram a shunt, based on manufacturer reports as well as the authors' experimental data with a threshold of more than 300 G. While many of the devices did saturate the smartphone sensors at the source, the magnetic flux density of the objects decreases significantly at 2 inches.
The existence of an upper limit on the magnetometers of all the smartphones used, although well below the published deprogramming threshold for modern programmable valves, does not allow us to give precise recommendations on those devices that saturate the sensor. Based on the authors' experimental data using smartphone-integrated magnetometers, they concluded that devices that measure < 40 G can be used safely close to a PV.
外部磁场可能会对可编程阀机构产生影响,并可能改变其开启压力。随着可穿戴技术开始渗透到主流生活中,显然需要提供有关这些设备在可编程阀 (PV) 附近使用的安全性信息。本研究的目的是使用智能手机集成的磁力计评估参考设备的磁场,并将结果与已发表的分流容限进行比较。
使用来自不同制造商的五部智能手机,使用智能手机内部磁力计生成的测量值评估各种常用 (n = 6) 和新一代 (n = 10) 设备的磁性。还使用校准的磁场强度不同的磁铁对 PV 公差进行测试。
所有测试的智能手机集成磁力计在大约 5000 µT 或 50 Gauss (G) 处都有工厂传感器饱和点。这远低于制造商报告以及作者使用超过 300 G 的阈值进行的实验数据所表明的潜在磁体去程控分流器的阈值。虽然许多设备在源头上使智能手机传感器饱和,但物体的磁通密度在 2 英寸处会显著下降。
虽然所有使用的智能手机上的磁力计都存在上限,尽管远低于现代可编程阀的去程控阈值,但这并不能使我们对那些使传感器饱和的设备提供精确的建议。基于作者使用智能手机集成磁力计进行的实验数据,他们得出结论,测量值 < 40 G 的设备可以在靠近 PV 的地方安全使用。