Yan Wenjie, Fuh Huei-Ru, Lv Yanhui, Chen Ke-Qiu, Tsai Tsung-Yin, Wu Yuh-Renn, Shieh Tung-Ho, Hung Kuan-Ming, Li Juncheng, Zhang Duan, Ó Coileáin Cormac, Arora Sunil K, Wang Zhi, Jiang Zhaotan, Chang Ching-Ray, Wu Han-Chun
School of Physics, Beijing Institute of Technology, Beijing, P. R. China.
Department of Physics, National Taiwan University, Taipei, Taiwan.
Nat Commun. 2021 Apr 1;12(1):2018. doi: 10.1038/s41467-021-22316-8.
There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS, GaSe, GeSe, monolayer WSe, and monolayer MoSe sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.
对于能够在极端条件下感应微小变形和振动的高柔韧性、高灵敏度及低功耗应变片,存在着迫切需求。提高应变片系数仍然是应变传感器面临的最大挑战之一。这一系数通常限制在300以下,且在制造传感器时就已确定。我们报告了一种基于范德华材料的应变传感器的应变片系数调谐与增强策略,该策略通过压电效应和光电效应的相互作用来调节载流子迁移率和浓度。对于一个硫化锡(SnS)传感器,我们报告其应变片系数高达3933,并且能够在23至3933的大范围内对其进行调节。硫化锡、硒化镓(GaSe)、硒化锗(GeSe)、单层硒化钨(WSe)和单层硒化钼(MoSe)传感器的结果表明,这对于范德华半导体来说是一种普遍现象。我们还通过检测声音引起的振动以及捕捉身体运动来提供概念验证演示。