Wang Jian-Huan, Wang Ting, Zhang Jian-Jun
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.
Nanomaterials (Basel). 2021 Mar 19;11(3):788. doi: 10.3390/nano11030788.
Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.
晶圆级面内纳米线（NWs）的可控生长是实现基于NW的可寻址且可扩展量子器件的前提条件。在此，通过在图案化Si结构上引入分子束外延，我们展示了在Si（001）衬底上晶圆级外延生长位置可控的面内Si、SiGe和Ge/Si核壳NW阵列。外延生长的Si、SiGe和Ge/Si核壳NW高度均匀，具有清晰的晶面。观察到具有四个{111}晶面且侧边宽度约为25 nm的悬空Si NW。包括高分辨率透射电子显微镜（HRTEM）在内的表征证实了这些外延NW的高质量。
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