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基于MEMS的磁场测绘霍尔传感器阵列的设计与应用

Design and Application of MEMS-Based Hall Sensor Array for Magnetic Field Mapping.

作者信息

Lee Chia-Yen, Lin Yu-Ying, Kuo Chung-Kang, Fu Lung-Ming

机构信息

Institute of Materials Engineering, National Pingtung University of Science and Technology, Pingtung 912, Taiwan.

Department of Materials Engineering, National Pingtung University of Science and Technology, Pingtung 912, Taiwan.

出版信息

Micromachines (Basel). 2021 Mar 12;12(3):299. doi: 10.3390/mi12030299.

DOI:10.3390/mi12030299
PMID:33809131
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7998490/
Abstract

A magnetic field measurement system based on an array of Hall sensors is proposed. The sensors are fabricated using conventional microelectromechanical systems (MEMS) techniques and consist of a P-type silicon substrate, a silicon dioxide isolation layer, a phosphide-doped cross-shaped detection zone, and gold signal leads. When placed within a magnetic field, the interaction between the local magnetic field produced by the working current and the external magnetic field generates a measurable Hall voltage from which the strength of the external magnetic field is then derived. Four Hall sensors are fabricated incorporating cross-shaped detection zones with an identical aspect ratio (2.625) but different sizes (S, M, L, and XL). For a given working current, the sensitivities and response times of the four devices are found to be almost the same. However, the offset voltage increases with the increasing size of the detection zone. A 3 × 3 array of sensors is assembled into a 3D-printed frame and used to determine the magnetic field distributions of a single magnet and a group of three magnets, respectively. The results show that the constructed 2D magnetic field contour maps accurately reproduce both the locations of the individual magnets and the distributions of the magnetic fields around them.

摘要

提出了一种基于霍尔传感器阵列的磁场测量系统。这些传感器采用传统的微机电系统(MEMS)技术制造,由P型硅衬底、二氧化硅隔离层、磷掺杂十字形检测区和金信号引线组成。当置于磁场中时,工作电流产生的局部磁场与外部磁场之间的相互作用会产生可测量的霍尔电压,进而由此得出外部磁场的强度。制作了四个霍尔传感器,其十字形检测区的长宽比相同(2.625)但尺寸不同(S、M、L和XL)。对于给定的工作电流,发现这四个器件的灵敏度和响应时间几乎相同。然而,失调电压随着检测区尺寸的增大而增加。将一个3×3的传感器阵列组装到一个3D打印框架中,分别用于确定单个磁体和一组三个磁体的磁场分布。结果表明,构建的二维磁场等高线图准确地再现了各个磁体的位置及其周围磁场的分布。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d4eea0cd5659/micromachines-12-00299-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/efa985edc8b2/micromachines-12-00299-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/260116bbfa6a/micromachines-12-00299-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/07ff2d4a55ee/micromachines-12-00299-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/2e050d7ec1f3/micromachines-12-00299-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/8017f2a6319c/micromachines-12-00299-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/a388885c5d96/micromachines-12-00299-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d58da9b28e89/micromachines-12-00299-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/c8e0a35607d4/micromachines-12-00299-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/88a36cbf0a74/micromachines-12-00299-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d6ffcbb310df/micromachines-12-00299-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/4e94a9e4aedb/micromachines-12-00299-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d4eea0cd5659/micromachines-12-00299-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/efa985edc8b2/micromachines-12-00299-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/260116bbfa6a/micromachines-12-00299-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/07ff2d4a55ee/micromachines-12-00299-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/2e050d7ec1f3/micromachines-12-00299-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/8017f2a6319c/micromachines-12-00299-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/a388885c5d96/micromachines-12-00299-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d58da9b28e89/micromachines-12-00299-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/c8e0a35607d4/micromachines-12-00299-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/88a36cbf0a74/micromachines-12-00299-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d6ffcbb310df/micromachines-12-00299-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/4e94a9e4aedb/micromachines-12-00299-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9069/7998490/d4eea0cd5659/micromachines-12-00299-g012.jpg

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