Fan Linjie, Bi Jinshun, Xi Kai, Majumdar Sandip, Li Bo
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China.
Sensors (Basel). 2020 May 12;20(10):2751. doi: 10.3390/s20102751.
This work investigates the behavior of fully depleted silicon-on-insulator (FD-SOI) Hall sensors with an emphasis on their physical parameters, namely the aspect ratio, doping concentration, and thicknesses. Via 3D-technology computer aided design (TCAD) simulations with a galvanomagnetic transport model, the performances of the Hall voltage, sensitivity, efficiency, offset voltage, and temperature characteristics are evaluated. The optimal structure of the sensor in the simulation has a sensitivity of 86.5 mV/T and an efficiency of 218.9 V/WT at the bias voltage of 5 V. In addition, the effects of bias, such as the gate voltage and substrate voltage, on performance are also simulated and analyzed. Optimal structure and bias design rules are proposed, as are some adjustable trade-offs that can be chosen by designers to meet their own Hall sensor requirements.
这项工作研究了全耗尽绝缘体上硅（FD - SOI）霍尔传感器的行为，重点关注其物理参数，即纵横比、掺杂浓度和厚度。通过使用电磁输运模型的三维技术计算机辅助设计（TCAD）模拟，评估了霍尔电压、灵敏度、效率、失调电压和温度特性等性能。模拟中传感器的最佳结构在5 V偏置电压下具有86.5 mV/T的灵敏度和218.9 V/WT的效率。此外，还模拟和分析了偏置（如栅极电压和衬底电压）对性能的影响。提出了最佳结构和偏置设计规则，以及一些可调节的权衡方案，设计人员可以根据自身霍尔传感器的要求进行选择。
