Izquierdo Nezhueyotl, Myers Jason C, Golani Prafful, De Los Santos Adonica, Seaton Nicholas C A, Koester Steven J, Campbell Stephen A
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, United States of America.
Characterization Facility, University of Minnesota, Minneapolis, United States of America.
Nanotechnology. 2021 May 17;32(32). doi: 10.1088/1361-6528/abfc09.
Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 × 110μmand ranging from 200 nm to 2μmthick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 10, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cmVsat= -0.9 V and= -60 V.
采用短程输运技术生长出黑色砷化磷单晶，晶体尺寸达12×110μm，厚度在200nm至2μm之间。反应条件要求将锡、碘化锡（IV）、灰砷和红磷置于抽真空的石英安瓿中，并升温至最高温度630°C。利用拉曼光谱、X射线衍射、X射线光电子能谱、截面透射显微镜和电子背散射衍射对晶体结构和元素组成进行了表征。这些数据为生长机制提供了有价值的见解。先前开发的β-P薄膜生长技术可通过对反应持续时间和反应物质量比进行轻微修改来适应β-AsP薄膜生长。对在与薄膜生长过程相同的反应条件下生长的剥离块状β-AsP制成的器件进行了表征，结果显示其开/关电流比为10，阈值电压为-60V，峰值场效应空穴迁移率为23cm²V⁻¹s⁻¹，饱和电压Vsat = -0.9V，阈值电压Vth = -60V。
