Department of Chemistry, Drexel University, Philadelphia, PA, 19104, USA.
Angew Chem Int Ed Engl. 2016 Sep 19;55(39):11829-33. doi: 10.1002/anie.201605516. Epub 2016 Aug 24.
Heating red phosphorus in sealed ampoules in the presence of a Sn/SnI4 catalyst mixture has provided bulk black phosphorus at much lower pressures than those required for allotropic conversion by anvil cells. Herein we report the growth of ultra-long 1D red phosphorus nanowires (>1 mm) selectively onto a wafer substrate from red phosphorus powder and a thin film of red phosphorus in the present of a Sn/SnI4 catalyst. Raman spectra and X-ray diffraction characterization suggested the formation of crystalline red phosphorus nanowires. FET devices constructed with the red phosphorus nanowires displayed a typical I-V curve similar to that of black phosphorus and a similar mobility reaching 300 cm(2) V(-1) s with an Ion /Ioff ratio approaching 10(2) . A significant response to infrared light was observed from the FET device.
在 Sn/SnI4 催化剂混合物的存在下,将红磷密封在安瓿瓶中加热,得到了块状黑磷,所需压力远低于通过砧细胞进行同素异形转化所需的压力。在此,我们报告了在 Sn/SnI4 催化剂的存在下,从红磷粉末和红磷薄膜中选择性地在晶片衬底上生长超长一维红磷纳米线(>1mm)。拉曼光谱和 X 射线衍射表征表明形成了结晶红磷纳米线。用红磷纳米线构建的 FET 器件显示出典型的 I-V 曲线,类似于黑磷,并且迁移率相似,达到 300cm2V-1s-1,离子/关比值接近 102。从 FET 器件中观察到对红外光的显著响应。