Huang Tianyi, Lin Sen, Zou Jingyi, Wang Zexiao, Zhong Yibai, Li Jingwei, Wang Ruixuan, Wang Zhixing, St Luce Kevin, Kim Rex, Cui Jianzhou, Wang Han, Li Qing, Xu Min, Shen Sheng, Zhang Xu
Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States.
ACS Appl Mater Interfaces. 2025 Jan 8;17(1):1861-1868. doi: 10.1021/acsami.4c14865. Epub 2024 Dec 20.
Recently, tellurium has attracted resurgent interest due to its outstanding p-type characteristics and ambient environmental stability. Here, we present a substrate engineering-based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1450 cm/(V s), which is, to the best of our knowledge, the highest among existing synthesized two-dimensional p-type semiconductors. The high mobility of Te enables the fabrication of Te/MoS PN diodes with highly gate-tunable characteristics. The Te/MoS heterostructure is demonstrated to be used as visible-light photodetectors with a current responsivity up to 630 A/W, which is about 1 order of magnitude higher than one achieved using p-type Si-MoS PN photodiodes. The photoresponse of Te/MoS heterojunctions also exhibits strong gate tunability due to their ultrathin thickness and unique band alignment. The successful synthesis of high-mobility Te and its integration into Te/MoS photodiodes show promise for the development of highly tunable and multifunctional photodetectors.
最近，碲因其出色的p型特性和环境稳定性而重新引起了人们的关注。在此，我们提出了一种基于衬底工程的物理气相沉积方法来合成高质量的碲纳米片，并实现了1450 cm/(V s)的场效应空穴迁移率，据我们所知，这是现有合成二维p型半导体中最高的。碲的高迁移率使得能够制造具有高度栅极可调特性的碲/二硫化钼PN二极管。碲/二硫化钼异质结构被证明可用作可见光光电探测器，电流响应率高达630 A/W，比使用p型硅-二硫化钼PN光电二极管所达到的响应率高出约一个数量级。碲/二硫化钼异质结的光响应由于其超薄厚度和独特的能带排列也表现出很强的栅极可调性。高迁移率碲的成功合成及其在碲/二硫化钼光电二极管中的集成，为开发高度可调谐和多功能光电探测器带来了希望。
