在具有坑图案的绝缘体上硅衬底上一步法形成二维光子晶体和自组装锗（硅）纳米岛的空间有序阵列。
One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate.
作者信息
Novikov Alexey V, Smagina Zhanna V, Stepikhova Margarita V, Zinovyev Vladimir A, Rudin Sergey A, Dyakov Sergey A, Rodyakina Ekaterina E, Nenashev Alexey V, Sergeev Sergey M, Peretokin Artem V, Dvurechenskii Anatoly V
机构信息
Institute for Physics of Microstructures Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia.
Radiophysical Department, Nizhny Novgorod State University, 603950 Nizhny Novgorod, Russia.
出版信息
Nanomaterials (Basel). 2021 Apr 2;11(4):909. doi: 10.3390/nano11040909.
A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre-patterned substrate both for the growth of spatially ordered QDs and for the formation of photonic crystal (PhC) in which QDs are embedded. The periodic array of deep pits on the SOI substrate simultaneously serves as a template for spatially ordering of QDs and the basis for two-dimensional PhCs. As a result of theoretical and experimental studies, the main regularities of the QD nucleation on the pre-patterned surface with deep pits were revealed. The parameters of the pit-patterned substrate (the period of the location of the pits, the pit shape, and depth) providing a significant increase of the QD luminescence intensity due to the effective interaction of QD emission with the PhC modes are found.
提出了一种通过在具有凹坑图案的绝缘体上硅（SOI）衬底上形成量子点（QD）的有序阵列来提高锗（硅）量子点发光效率的新方法。这种方法使得可以将相同的预图案化衬底用于空间有序量子点的生长以及用于嵌入量子点的光子晶体（PhC）的形成。SOI衬底上的深凹坑周期性阵列同时充当量子点空间排序的模板和二维光子晶体的基础。通过理论和实验研究，揭示了在具有深凹坑的预图案化表面上量子点成核的主要规律。发现了由于量子点发射与光子晶体模式的有效相互作用而导致量子点发光强度显著增加的凹坑图案化衬底的参数（凹坑位置的周期、凹坑形状和深度）。
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