Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea.
Adv Mater. 2014 Nov 26;26(44):7480-7. doi: 10.1002/adma.201402472. Epub 2014 Sep 8.
Crossbar-structured memory comprising 32 × 32 arrays with one selector-one resistor (1S-1R) components are initially fabricated on a rigid substrate. They are transferred without mechanical damage via an inorganic-based laser lift-off (ILLO) process as a result of laser-material interaction. Addressing tests of the transferred memory arrays are successfully performed to verify mitigation of cross-talk on a plastic substrate.
交叉结构的存储器由 32×32 个阵列组成，每个阵列包含一个选择器-一个电阻器（1S-1R）元件，最初在刚性衬底上制造。通过基于无机的激光剥离（ILLO）工艺，在激光与材料相互作用的作用下，它们可以无损地转移。对转移的存储阵列进行寻址测试，成功验证了在塑料衬底上对串扰的抑制。
