Biscay Nicolas, Henry Lucile, Adschiri Tadafumi, Yoshimura Masahiro, Aymonier Cyril
CNRS, University of Bordeaux, Bordeaux INP, ICMCB, UMR 5026, 33600 Pessac, France.
WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
Nanomaterials (Basel). 2021 May 20;11(5):1351. doi: 10.3390/nano11051351.
Silicon carbide materials are excellent candidates for high-performance applications due to their outstanding thermomechanical properties and their strong corrosion resistance. SiC materials can be processed in various forms, from nanomaterials to continuous fibers. Common applications of SiC materials include the aerospace and nuclear fields, where the material is used in severely oxidative environments. Therefore, it is important to understand the kinetics of SiC oxidation and the parameters influencing them. The first part of this review focuses on the oxidation of SiC in dry air according to the Deal and Grove model showing that the oxidation behavior of SiC depends on the temperature and the time of oxidation. The oxidation rate can also be accelerated with the presence of HO in the system due to its diffusion through the oxide scales. Therefore, wet oxidation is studied in the second part. The third part details the effect of hydrothermal media on the SiC materials that has been explained by different models, namely Yoshimura (1986), Hirayama (1989) and Allongue (1992). The last part of this review focuses on the hydrothermal corrosion of SiC materials from an application point of view and determine whether it is beneficial (manufacturing of materials) or detrimental (use of SiC in latest nuclear reactors).
由于其出色的热机械性能和强大的耐腐蚀性,碳化硅材料是高性能应用的理想候选材料。碳化硅材料可以加工成各种形式,从纳米材料到连续纤维。碳化硅材料的常见应用包括航空航天和核领域,在这些领域中该材料用于严苛的氧化环境。因此,了解碳化硅氧化动力学以及影响它们的参数非常重要。本综述的第一部分重点关注根据迪尔和格罗夫模型在干燥空气中碳化硅的氧化,表明碳化硅的氧化行为取决于温度和氧化时间。由于系统中存在HO并通过氧化皮扩散,氧化速率也会加快。因此,第二部分研究了湿氧化。第三部分详细介绍了水热介质对碳化硅材料的影响,这已由不同模型解释,即吉村(1986年)、平山(1989年)和阿隆格(1992年)的模型。本综述的最后一部分从应用角度重点关注碳化硅材料的水热腐蚀,并确定其是有益的(材料制造)还是有害的(在最新核反应堆中使用碳化硅)。