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等离子体增强化学气相沉积法合成垂直取向的石墨烯纳米片。

Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets.

机构信息

State Key Laboratory of Clean Energy Utilization, Institute for Thermal Power Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China.

出版信息

Nanoscale. 2013 Jun 21;5(12):5180-204. doi: 10.1039/c3nr33449j.

Abstract

Vertically oriented graphene (VG) nanosheets have attracted growing interest for a wide range of applications, from energy storage, catalysis and field emission to gas sensing, due to their unique orientation, exposed sharp edges, non-stacking morphology, and huge surface-to-volume ratio. Plasma-enhanced chemical vapor deposition (PECVD) has emerged as a key method for VG synthesis; however, controllable growth of VG with desirable characteristics for specific applications remains a challenge. This paper attempts to summarize the state-of-the-art research on PECVD growth of VG nanosheets to provide guidelines on the design of plasma sources and operation parameters, and to offer a perspective on outstanding challenges that need to be overcome to enable commercial applications of VG. The review starts with an overview of various types of existing PECVD processes for VG growth, and then moves on to research on the influences of feedstock gas, temperature, and pressure on VG growth, substrate pretreatment, the growth of VG patterns on planar substrates, and VG growth on cylindrical and carbon nanotube (CNT) substrates. The review ends with a discussion on challenges and future directions for PECVD growth of VG.

摘要

垂直取向的石墨烯(VG)纳米片因其独特的取向、暴露的锐利边缘、非堆叠形态和巨大的表面积与体积比,在储能、催化和场发射、气体传感等领域得到了广泛的关注。等离子体增强化学气相沉积(PECVD)已成为 VG 合成的关键方法;然而,对于特定应用,可控生长具有理想特性的 VG 仍然是一个挑战。本文试图总结 PECVD 生长 VG 纳米片的最新研究进展,为等离子体源和操作参数的设计提供指导,并对需要克服的突出挑战提供展望,以实现 VG 的商业应用。本文首先概述了现有的各种 PECVD 工艺用于 VG 生长,然后介绍了原料气体、温度和压力对 VG 生长的影响、衬底预处理、平面衬底上 VG 图案的生长以及圆柱和碳纳米管(CNT)衬底上 VG 生长的研究进展。最后,本文讨论了 PECVD 生长 VG 面临的挑战和未来的发展方向。

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