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通过保形无籽金电镀制造用于干涉成像的X射线光栅。

Fabrication of X-ray Gratings for Interferometric Imaging by Conformal Seedless Gold Electroplating.

作者信息

Jefimovs Konstantins, Vila-Comamala Joan, Arboleda Carolina, Wang Zhentian, Romano Lucia, Shi Zhitian, Kagias Matias, Stampanoni Marco

机构信息

Paul Scherrer Institut, 5232 Villigen, Switzerland.

Institute for Biomedical Engineering, University and ETH Zürich, 8092 Zürich, Switzerland.

出版信息

Micromachines (Basel). 2021 May 7;12(5):517. doi: 10.3390/mi12050517.

Abstract

We present a method to produce small pitch gratings for X-ray interferometric imaging applications, allowing the phase sensitivity to be increased and/or the length of the laboratory setup to be minimized. The method is based on fabrication of high aspect ratio silicon microstructures using deep reactive ion etching (Bosch technique) of dense grating arrays and followed by conformal electroplating of Au. We demonstrated that low resistivity Si substrates (<0.01 Ohm·cm) enable the metal seeding layer deposition step to be avoided, which is normally required to initiate the electroplating process. Etching conditions were optimized to realize Si recess structures with a slight bottom tapering, which ensured the void-free Au filling of the trenches. Vapor HF was used to remove the native oxide layer from the Si grating surface prior to electroplating in the cyanide-based Au electrolyte. Fabrication of Au gratings with pitch in the range 1.2-3.0 µm was successfully realized. A substantial improved aspect ratio of 45:1 for a pitch size of 1.2 µm was achieved with respect to the prior art on 4-inch wafer-based technology. The fabricated Au gratings were tested with X-ray interferometers in Talbot-Laue configuration with measured visibility of 13% at an X-ray design energy of 26 keV.

摘要

我们提出了一种用于X射线干涉成像应用的小间距光栅制造方法,该方法能够提高相位灵敏度和/或使实验室装置的长度最小化。该方法基于使用深反应离子刻蚀(博世工艺)对密集光栅阵列进行高深宽比硅微结构的制造,随后进行金的共形电镀。我们证明,低电阻率的硅衬底(<0.01 Ohm·cm)能够避免通常用于启动电镀过程的金属种子层沉积步骤。优化了蚀刻条件以实现具有轻微底部锥形的硅凹槽结构,这确保了沟槽中无空隙的金填充。在基于氰化物的金电解液中进行电镀之前,使用蒸汽HF去除硅光栅表面的原生氧化层。成功实现了间距在1.2 - 3.0 µm范围内的金光栅的制造。相对于基于4英寸晶圆技术的现有技术,对于1.2 µm的间距尺寸,实现了高达45:1的显著改进的深宽比。所制造的金光栅在Talbot - Laue配置下用X射线干涉仪进行了测试,在26 keV的X射线设计能量下测得的可见度为13%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4c6d/8147938/1dc09be9ac89/micromachines-12-00517-g001.jpg

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