Josell D, Osborn W, Williams M E, Miao H
Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
J Electrochem Soc. 2022;169(3). doi: 10.1149/1945-7111/ac5c0b.
This work extends an extreme variant of superconformal Au electrodeposition to deeper device architectures while exploring factors that constrain its function and the robustness of void-free processing. The unconventional bottom-up process is used to fill diffraction gratings with trenches 94 μm deep and 305 μm deep, with aspect ratios (height/width) of just below 20 and 15, respectively, in near-neutral 0.16 mol·L NaAu(SO) + 0.64 mol·L NaSO electrolyte containing 50 μmol·L Bi. Although the aspect ratios are modest compared to previously demonstrated void-free filling beyond AR = 60, the deepest trenches filled exceed those in previous work by 100 μm - a nearly 50 % increase in depth. Processes that substantially accelerate the start of bottom-up deposition demonstrate a linkage between transport and void-free filling. Final profiles are highly uniform across 65 mm square gratings because of self-passivation inherent in the process. Electron microscopy and electron backscatter diffraction confirm the fully dense Au and void-free filling suggested by the electrochemical measurements. X-ray transmission "fringe visibility" average more than 80 % at 50 kV X-ray tube voltage across the deeper gratings and 70 % at 40 kV across the shallower gratings, also consistent with uniformly dense, void-free fill across the gratings.
这项工作将超共形金电沉积的一种极端变体扩展到更深的器件架构,同时探索限制其功能的因素以及无空隙工艺的稳健性。采用非常规的自下而上工艺,在含有50 μmol·L铋的近中性0.16 mol·L NaAu(SO) + 0.64 mol·L NaSO电解液中,填充深度为94 μm和305 μm的衍射光栅,其纵横比(高度/宽度)分别略低于20和15。尽管与之前展示的纵横比超过60时的无空隙填充相比,这里的纵横比不算大,但填充的最深沟槽比之前的工作深100 μm,深度增加了近50%。大幅加速自下而上沉积起始的工艺表明了传输与无空隙填充之间的联系。由于该工艺固有的自钝化特性,最终轮廓在65平方毫米的光栅上高度均匀。电子显微镜和电子背散射衍射证实了电化学测量所表明的完全致密的金和无空隙填充。在50 kV X射线管电压下,穿过较深光栅的X射线透射“条纹可见度”平均超过80%,在40 kV下穿过较浅光栅时为70%,这也与光栅上均匀致密、无空隙的填充情况一致。