Ando Masahiko, Yoneya Makoto
R&D Group, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo, 185-8601, Japan.
Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.
Sci Rep. 2021 Jun 1;11(1):11518. doi: 10.1038/s41598-021-90924-x.
We developed active-matrix in-plane switching liquid crystal displays (IPS-LCDs) with a new vertical structure composed of thin-film transistors (TFTs) that have an aperture ratio of 60% to reduce energy consumption. The novel TFT has a channel and a back channel made of a hydrogenated amorphous-silicon semiconductor layer sandwiched by thin silicon oxide insulating layers. The transfer characteristics are enhanced by uniformly shifting the threshold voltage to be higher than the maximum LC driving voltage (typically > 5 V). The enhanced TFT characteristics provided with a new driving scheme and shielding electrodes enables both the common line and black matrix to be eliminated. We fabricated an IPS TFT-LCD panel with aperture and contrast ratios that are 160% those of the conventional pixel structure.
我们开发了一种有源矩阵平面切换液晶显示器(IPS-LCD),其具有由薄膜晶体管(TFT)组成的新型垂直结构,该薄膜晶体管的开口率为60%,以降低能耗。这种新型TFT具有一个沟道和一个背沟道,由夹在薄氧化硅绝缘层之间的氢化非晶硅半导体层制成。通过将阈值电压均匀地提高到高于最大液晶驱动电压(通常>5V),转移特性得到增强。具有新驱动方案和屏蔽电极的增强型TFT特性使得公共线和黑矩阵都可以被消除。我们制造了一个IPS TFT-LCD面板,其开口率和对比度是传统像素结构的160%。