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增强型薄膜晶体管驱动的无公共线和黑矩阵的高孔径面内切换液晶显示器。

Enhanced thin-film transistor driven high-aperture in-plane switching liquid crystal displays without common line and black matrix.

作者信息

Ando Masahiko, Yoneya Makoto

机构信息

R&D Group, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo, 185-8601, Japan.

Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, 305-8568, Japan.

出版信息

Sci Rep. 2021 Jun 1;11(1):11518. doi: 10.1038/s41598-021-90924-x.

DOI:10.1038/s41598-021-90924-x
PMID:34075136
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8169844/
Abstract

We developed active-matrix in-plane switching liquid crystal displays (IPS-LCDs) with a new vertical structure composed of thin-film transistors (TFTs) that have an aperture ratio of 60% to reduce energy consumption. The novel TFT has a channel and a back channel made of a hydrogenated amorphous-silicon semiconductor layer sandwiched by thin silicon oxide insulating layers. The transfer characteristics are enhanced by uniformly shifting the threshold voltage to be higher than the maximum LC driving voltage (typically > 5 V). The enhanced TFT characteristics provided with a new driving scheme and shielding electrodes enables both the common line and black matrix to be eliminated. We fabricated an IPS TFT-LCD panel with aperture and contrast ratios that are 160% those of the conventional pixel structure.

摘要

我们开发了一种有源矩阵平面切换液晶显示器(IPS-LCD),其具有由薄膜晶体管(TFT)组成的新型垂直结构,该薄膜晶体管的开口率为60%,以降低能耗。这种新型TFT具有一个沟道和一个背沟道,由夹在薄氧化硅绝缘层之间的氢化非晶硅半导体层制成。通过将阈值电压均匀地提高到高于最大液晶驱动电压(通常>5V),转移特性得到增强。具有新驱动方案和屏蔽电极的增强型TFT特性使得公共线和黑矩阵都可以被消除。我们制造了一个IPS TFT-LCD面板,其开口率和对比度是传统像素结构的160%。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/d774692a016e/41598_2021_90924_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/2b52ef8a9d05/41598_2021_90924_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/21785fa1d9a6/41598_2021_90924_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/294c4967e094/41598_2021_90924_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/3f0206fe74bd/41598_2021_90924_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/f239c1bcf0d6/41598_2021_90924_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/766135fb5056/41598_2021_90924_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/639af890b9c6/41598_2021_90924_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/d774692a016e/41598_2021_90924_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/2b52ef8a9d05/41598_2021_90924_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/21785fa1d9a6/41598_2021_90924_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/294c4967e094/41598_2021_90924_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/3f0206fe74bd/41598_2021_90924_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/f239c1bcf0d6/41598_2021_90924_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/766135fb5056/41598_2021_90924_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/639af890b9c6/41598_2021_90924_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d1b/8169844/d774692a016e/41598_2021_90924_Fig8_HTML.jpg

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本文引用的文献

1
Liquid crystal display and organic light-emitting diode display: present status and future perspectives.液晶显示器和有机发光二极管显示器:现状与未来展望。
Light Sci Appl. 2018 Mar 23;7:17168. doi: 10.1038/lsa.2017.168. eCollection 2018.
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Enabling thin-film transistor technologies and the device metrics that matter.实现薄膜晶体管技术和重要的器件指标。
Nat Commun. 2018 Dec 10;9(1):5264. doi: 10.1038/s41467-018-07424-2.
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Evidence for charge-trapping inducing polymorphic structural-phase transition in pentacene.证据表明,在并五苯中,电荷俘获诱导了多晶型结构相变。
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Control of carrier density by self-assembled monolayers in organic field-effect transistors.有机场效应晶体管中自组装单分子层对载流子密度的控制。
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