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用于突触操作的单电子隧穿硫化铅/磷化铟异质结构纳米片

Single-Electron Tunneling PbS/InP Heterostructure Nanoplatelets for Synaptic Operations.

作者信息

Jarschel Paulo, Kim Jin Ho, Biadala Louis, Berthe Maxime, Lambert Yannick, Osgood Richard M, Patriarche Gilles, Grandidier Bruno, Xu Jimmy

机构信息

School of Engineering, Brown University, Providence 02912, Rhode Island, United States.

Photonics Research Center, University of Campinas, Campinas 13083-859, São Paulo, Brazil.

出版信息

ACS Appl Mater Interfaces. 2021 Aug 18;13(32):38450-38457. doi: 10.1021/acsami.1c06096. Epub 2021 Aug 6.

DOI:10.1021/acsami.1c06096
PMID:34357748
Abstract

Power consumption, thermal management, and wiring challenge of the binary serial architecture drive the search for alternative paradigms to computing. Of special interest is neuromorphic computing, in which materials and device structures are designed to mimic neuronal functionalities with energy-efficient non-linear responses and both short- and long-term plasticities. In this work, we explore and report on the enabling potential of single-electron tunneling (SET) in PbS nanoplatelets epitaxially grown in the liquid phase on InP, which present these key features. By extrapolating the experimental data in the SET regime, we predict and model synaptic operations. The low-energy (<fJ), high-speed (MHz) operation and scalable fabrication process of the PbS/InP nanoplatelets make such a nanoscale system attractive as neuromorphic computing building blocks.

摘要

二进制串行架构的功耗、热管理和布线挑战推动了对替代计算范式的探索。特别值得关注的是神经形态计算,其中材料和器件结构被设计为模仿神经元功能,具有节能的非线性响应以及短期和长期可塑性。在这项工作中,我们探索并报告了在InP上液相外延生长的PbS纳米片中单电子隧穿(SET)的赋能潜力,这些纳米片具有这些关键特性。通过外推SET区域的实验数据,我们预测并模拟了突触操作。PbS/InP纳米片的低能量(<fJ)、高速(MHz)操作和可扩展的制造工艺使这样的纳米级系统作为神经形态计算构建模块具有吸引力。

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