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用于神经形态计算的可重构卤化物钙钛矿纳米晶体忆阻器

Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing.

作者信息

John Rohit Abraham, Demirağ Yiğit, Shynkarenko Yevhen, Berezovska Yuliia, Ohannessian Natacha, Payvand Melika, Zeng Peng, Bodnarchuk Maryna I, Krumeich Frank, Kara Gökhan, Shorubalko Ivan, Nair Manu V, Cooke Graham A, Lippert Thomas, Indiveri Giacomo, Kovalenko Maksym V

机构信息

Department of Chemistry and Applied Biosciences, Institute of Inorganic Chemistry, ETH Zürich, CH-8093, Zürich, Switzerland.

Empa-Swiss Federal Laboratories for Materials Science and Technology, CH-8600, Dübendorf, Switzerland.

出版信息

Nat Commun. 2022 Apr 19;13(1):2074. doi: 10.1038/s41467-022-29727-1.

DOI:10.1038/s41467-022-29727-1
PMID:35440122
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9018677/
Abstract

Many in-memory computing frameworks demand electronic devices with specific switching characteristics to achieve the desired level of computational complexity. Existing memristive devices cannot be reconfigured to meet the diverse volatile and non-volatile switching requirements, and hence rely on tailored material designs specific to the targeted application, limiting their universality. "Reconfigurable memristors" that combine both ionic diffusive and drift mechanisms could address these limitations, but they remain elusive. Here we present a reconfigurable halide perovskite nanocrystal memristor that achieves on-demand switching between diffusive/volatile and drift/non-volatile modes by controllable electrochemical reactions. Judicious selection of the perovskite nanocrystals and organic capping ligands enable state-of-the-art endurance performances in both modes - volatile (2 × 10 cycles) and non-volatile (5.6 × 10 cycles). We demonstrate the relevance of such proof-of-concept perovskite devices on a benchmark reservoir network with volatile recurrent and non-volatile readout layers based on 19,900 measurements across 25 dynamically-configured devices.

摘要

许多内存计算框架需要具有特定开关特性的电子设备,以实现所需的计算复杂度水平。现有的忆阻器件无法重新配置以满足各种易失性和非易失性开关要求,因此依赖于针对目标应用的定制材料设计,这限制了它们的通用性。结合离子扩散和漂移机制的“可重构忆阻器”可以解决这些限制,但它们仍然难以实现。在这里,我们展示了一种可重构卤化物钙钛矿纳米晶体忆阻器,它通过可控的电化学反应实现了在扩散/易失性和漂移/非易失性模式之间的按需切换。对钙钛矿纳米晶体和有机封端配体的明智选择在两种模式下都实现了一流的耐久性——易失性(2×10 个循环)和非易失性(5.6×10 个循环)。我们基于对 25 个动态配置的器件进行的 19,900 次测量,在具有易失性循环和非易失性读出层的基准储层网络上展示了这种概念验证钙钛矿器件的相关性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/308ef6a406f6/41467_2022_29727_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/baad607875c9/41467_2022_29727_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/0bf285a53af3/41467_2022_29727_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/a4baa08fbaea/41467_2022_29727_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/308ef6a406f6/41467_2022_29727_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/baad607875c9/41467_2022_29727_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/0bf285a53af3/41467_2022_29727_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/a4baa08fbaea/41467_2022_29727_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef0b/9018677/308ef6a406f6/41467_2022_29727_Fig4_HTML.jpg

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