Ahmadi Ramin, Ahmadi Mohammad Taghi, Rahimian Koloor Seyed Saeid, Petrů Michal
Nano-Physics Group, Nano-Technology Research Center, Physics Department, Faculty of Science, Urmia University, Urmia 5756151818, Iran.
Institute for Nanomaterials, Advanced Technologies and Innovation (CXI), Technical University of Liberec (TUL), Studentska 2, 461-17 Liberec, Czech Republic.
Materials (Basel). 2021 Jul 23;14(15):4109. doi: 10.3390/ma14154109.
The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal-semiconductor-metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the I-V is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.
基于石墨烯的组件（如扭曲石墨烯）的卓越特性，促使纳米电子学研究人员关注其在器件技术中的应用。在本研究中，在晶体管应用平台上对作为一类新型石墨烯结构的扭曲石墨烯进行了研究。因此，分析了其几何效应对肖特基晶体管工作的影响，并探讨了扭曲直径与扭曲次数之间的关系。考虑了一种基于金属 - 半导体 - 金属扭曲石墨烯的结作为肖特基晶体管。通过利用色散关系和量子隧穿，研究了沟道长度、扭曲石墨烯直径和扭曲次数偏差下晶体管性能的变化。结果表明，较小直径的扭曲石墨烯会影响基于扭曲石墨烯的肖特基晶体管的效率。此外，作为另一个主要特性，研究了电流 -电压特性，结果表明在这种类型的晶体管中，阈值电压会随着直径和扭曲次数的增加而升高。
