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电合成电位对氟掺杂氧化锡(FTO)上聚吡咯薄膜的成核、生长、附着力及电学性能的影响

Effect of Electrosynthesis Potential on Nucleation, Growth, Adhesion, and Electronic Properties of Polypyrrole Thin Films on Fluorine-Doped Tin Oxide (FTO).

作者信息

Puerres Jhon, Ortiz Pablo, Cortés María T

机构信息

Chemistry Department, Universidad de los Andes, Bogotá D.C. 111711, Colombia.

Chemical Engineering Department, Universidad de los Andes, Bogotá D.C. 111711, Colombia.

出版信息

Polymers (Basel). 2021 Jul 23;13(15):2419. doi: 10.3390/polym13152419.

Abstract

Polypyrrole (PPy) is one of the most attractive conducting polymers for thin film applications due to its good electrical conductivity, stability, optical properties, and biocompatibility. Among the technologies in which PPy has gained prominence are optoelectronics and solar energy conversion, where transparent electrodes such as fluorine-doped tin oxide (FTO) or indium tin oxide (ITO) are frequently used. However, FTO substrates have the notable advantage that their components are widely available in nature, unlike those of ITO. Recognizing the importance that the FTO/polypyrrole system has gained in various applications, here, we studied for the first time the nucleation and growth mechanism of electro-synthesized PPy on FTO. Additionally, the effect of the synthesis potential (0.9, 1.0, 1.1, and 1.2 V vs. Ag/AgCl) on the homogeneity, adhesion, conductivity, and HOMO energy levels of PPy films was determined. From current-time transients and scanning electron microscopy, it was found that films synthesized at 0.9 and 1.0 V exhibit 3D growth with progressive nucleation (as well as lower homogeneity and higher adhesion to FTO). In contrast, films synthesized at 1.1 and 1.2 V follow 2D growth with instantaneous nucleation. It was also evident that increasing the polymerization potential leads to polymers with lower conductivity and more negative HOMO levels (versus vacuum). These findings are relevant to encourage the use of electro-synthesized PPy in thin film applications that require a high control of material properties.

摘要

聚吡咯(PPy)因其良好的导电性、稳定性、光学性能和生物相容性,是薄膜应用中最具吸引力的导电聚合物之一。PPy在其中获得显著地位的技术包括光电子学和太阳能转换,其中经常使用诸如氟掺杂氧化锡(FTO)或氧化铟锡(ITO)等透明电极。然而,与ITO不同,FTO基板具有显著优势,即其成分在自然界中广泛可得。认识到FTO/聚吡咯体系在各种应用中已获得的重要性,在此,我们首次研究了在FTO上电合成PPy的成核和生长机制。此外,还确定了合成电位(相对于Ag/AgCl为0.9、1.0、1.1和1.2 V)对PPy薄膜的均匀性、附着力、导电性和HOMO能级的影响。从电流-时间瞬态和扫描电子显微镜观察发现,在0.9和1.0 V下合成的薄膜呈现三维生长且有渐进成核现象(以及较低的均匀性和对FTO较高的附着力)。相比之下,在1.1和1.2 V下合成的薄膜遵循二维生长且有瞬时成核现象。还明显的是,增加聚合电位会导致聚合物具有较低的导电性和更负的HOMO能级(相对于真空)。这些发现对于鼓励在需要高度控制材料性能的薄膜应用中使用电合成PPy具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2728/8347362/fe1de2497e19/polymers-13-02419-g001.jpg

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