Yang Zhen, Zou Zhiping, Zhang Zeyang, Xing Yubo, Wang Tao
Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China.
Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China.
Materials (Basel). 2021 Sep 6;14(17):5107. doi: 10.3390/ma14175107.
Si single crystal was implanted with 230 keV He ions to a fluence of 5 × 10/cm at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.
将单晶硅在600℃下用能量为230keV的氦离子注入，注入剂量为5×10/cm²。通过透射电子显微镜（TEM）和高分辨率透射电子显微镜（HRTEM）研究了在600℃下注入氦然后在1000℃退火的硅中的结构缺陷。给出了未退火样品的微观结构用于对比。退火后，棒状缺陷减少，同时出现了缠结位错和大的位错环。直接观察到被空洞捕获的位错线。除了形状从八面体转变为十四面体之外，空洞保持稳定。同时发现了层错四面体。空洞生长与位错无关。讨论了观察到的晶格缺陷的演变。
