磁电式磁场传感器综述

Magnetoelectric Magnetic Field Sensors: A Review.

作者信息

Bichurin Mirza, Petrov Roman, Sokolov Oleg, Leontiev Viktor, Kuts Viktor, Kiselev Dmitry, Wang Yaojin

机构信息

Institute of Electronic and Information Systems,Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia.

Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia.

出版信息

Sensors (Basel). 2021 Sep 17;21(18):6232. doi: 10.3390/s21186232.

DOI:10.3390/s21186232

PMID:34577439

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8470026/

Abstract

One of the new materials that have recently attracted wide attention of researchers are magnetoelectric (ME) composites. Great interest in these materials is due to their properties associated with the transformation of electric polarization/magnetization under the influence of external magnetic/electric fields and the possibility of their use to create new devices. In the proposed review, ME magnetic field sensors based on the widely used structures Terfenol-PZT/PMN-PT, Metglas-PZT/PMN-PT, and Metglas-Lithium niobate, among others, are considered as the first applications of the ME effect in technology. Estimates of the parameters of ME sensors are given, and comparative characteristics of magnetic field sensors are presented. Taking into account the high sensitivity of ME magnetic field sensors, comparable to superconducting quantum interference devices (SQUIDs), we discuss the areas of their application.

摘要

近年来引起研究人员广泛关注的新材料之一是磁电（ME）复合材料。对这些材料的极大兴趣源于它们在外部磁场/电场影响下与电极化/磁化转变相关的特性，以及利用它们制造新器件的可能性。在本综述中，基于广泛使用的结构（如Terfenol-PZT/PMN-PT、Metglas-PZT/PMN-PT和Metglas-铌酸锂等）的ME磁场传感器被视为ME效应在技术领域的首批应用。给出了ME传感器参数的估计值，并展示了磁场传感器的比较特性。考虑到ME磁场传感器具有与超导量子干涉器件（SQUID）相当的高灵敏度，我们讨论了它们的应用领域。