Tu Cheng, Chu Zhao-Qiang, Spetzler Benjamin, Hayes Patrick, Dong Cun-Zheng, Liang Xian-Feng, Chen Huai-Hao, He Yi-Fan, Wei Yu-Yi, Lisenkov Ivan, Lin Hwaider, Lin Yuan-Hua, McCord Jeffrey, Faupel Franz, Quandt Eckhard, Sun Nian-Xiang
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA.
College of Engineering, Peking University, Beijing 100871, China.
Materials (Basel). 2019 Jul 13;12(14):2259. doi: 10.3390/ma12142259.
The strong strain-mediated magnetoelectric (ME) coupling found in thin-film ME heterostructures has attracted an ever-increasing interest and enables realization of a great number of integrated multiferroic devices, such as magnetometers, mechanical antennas, RF tunable inductors and filters. This paper first reviews the thin-film characterization techniques for both piezoelectric and magnetostrictive thin films, which are crucial in determining the strength of the ME coupling. After that, the most recent progress on various integrated multiferroic devices based on thin-film ME heterostructures are presented. In particular, rapid development of thin-film ME magnetometers has been seen over the past few years. These ultra-sensitive magnetometers exhibit extremely low limit of detection (sub-pT/Hz) for low-frequency AC magnetic fields, making them potential candidates for applications of medical diagnostics. Other devices reviewed in this paper include acoustically actuated nanomechanical ME antennas with miniaturized size by 1-2 orders compared to the conventional antenna; integrated RF tunable inductors with a wide operation frequency range; integrated RF tunable bandpass filter with dual H- and E-field tunability. All these integrated multiferroic devices are compact, lightweight, power-efficient, and potentially integrable with current complementary metal oxide semiconductor (CMOS) technology, showing great promise for applications in future biomedical, wireless communication, and reconfigurable electronic systems.
在薄膜磁电(ME)异质结构中发现的强应变介导磁电耦合引起了越来越多的关注,并使得大量集成多铁性器件得以实现,如磁力计、机械天线、射频可调电感器和滤波器。本文首先回顾了压电和磁致伸缩薄膜的薄膜表征技术,这些技术对于确定磁电耦合强度至关重要。之后,介绍了基于薄膜磁电异质结构的各种集成多铁性器件的最新进展。特别是,在过去几年中,薄膜磁电磁力计取得了快速发展。这些超灵敏磁力计对低频交流磁场表现出极低的检测限(亚皮特斯拉/赫兹),使其成为医学诊断应用的潜在候选者。本文中回顾的其他器件包括与传统天线相比尺寸缩小1 - 2个数量级的声学驱动纳米机械磁电天线;具有宽工作频率范围的集成射频可调电感器;具有双H场和E场可调性的集成射频可调带通滤波器。所有这些集成多铁性器件都紧凑、轻便、节能,并且有可能与当前的互补金属氧化物半导体(CMOS)技术集成,在未来生物医学、无线通信和可重构电子系统的应用中显示出巨大的前景。