Huang Yu-Ming, Chen Jo-Hsiang, Liou Yu-Hau, James Singh Konthoujam, Tsai Wei-Cheng, Han Jung, Lin Chun-Jung, Kao Tsung-Sheng, Lin Chien-Chung, Chen Shih-Chen, Kuo Hao-Chung
Department of Photonics, Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
Institute of Photonic System, National Yang Ming Chiao Tung University, Tainan 71150, Taiwan.
Nanomaterials (Basel). 2021 Oct 13;11(10):2696. doi: 10.3390/nano11102696.
Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.
基于量子点(QD)的RGB微发光二极管技术被视为实现全彩微发光二极管显示器最具前景的方法之一。在这项工作中,我们展示了一种新型的纳米多孔氮化镓(NP-GaN)结构,它既能散射光又能承载量子点,以及一种基于嵌入量子点的NP-GaN的新型微发光二极管阵列。与典型的量子点薄膜相比,这种结构可以显著提高量子点的光吸收和稳定性。结果,绿色和红色量子点的光转换效率分别达到了90.3%和96.1%,使得绿色和红色子像素的发光均匀性分别提高了90.7%和91.2%。这项研究为开发高均匀性和高效率的颜色转换微发光二极管显示器提供了一条可行的途径。