低温p-GaN层对GaN基绿光发光二极管光学特性的影响
Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer.
作者信息
Li Jianfei, Chen Duo, Li Kuilong, Wang Qiang, Shi Mengyao, Diao Dejie, Cheng Chen, Li Changfu, Leng Jiancai
机构信息
Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China.
International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China.
出版信息
Nanomaterials (Basel). 2021 Nov 20;11(11):3134. doi: 10.3390/nano11113134.
GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range of 6-300 K and injection current range of 0.01-350 mA. Based on the results, we suggest that a 20 nm-thick LT p-GaN layer can effectively prevent indium (In) re-evaporation, improve the quantum-confined Stark effect in the last quantum well (QW) of the active region, and finally reduce the efficiency droop by about 7%.
采用光致发光（PL）和电致发光（EL）光谱方法，在6 - 300 K的温度范围以及0.01 - 350 mA的注入电流范围内，对在最后一层GaN势垒与p - AlGaN电子阻挡层之间具有不同厚度低温（LT）p - GaN层的氮化镓基绿色发光二极管（LED）进行了表征。基于这些结果，我们认为20纳米厚的LT p - GaN层可以有效防止铟（In）的再蒸发，改善有源区最后一个量子阱（QW）中的量子限制斯塔克效应，并最终将效率下降降低约7%。
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