Khan Muhammad Umair, Saqib Qazi Muhammad, Chougale Mahesh Y, Shaukat Rayyan Ali, Kim Jungmin, Bae Jinho
Department of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju, 63243 Korea.
Microsyst Nanoeng. 2021 Oct 13;7:78. doi: 10.1038/s41378-021-00305-7. eCollection 2021.
The human brain is the most efficient computational and intelligent system, and researchers are trying to mimic the human brain using solid-state materials. However, the use of solid-state materials has a limitation due to the movement of neurotransmitters. Hence, soft memory devices are receiving tremendous attention for smooth neurotransmission due to the ion concentration polarization mechanism. This paper proposes a core-shell soft ionic liquid (IL)-resistive memory device for electronic synapses using Cu/Ag@AgCl/Cu with multistate resistive behavior. The presence of the Ag@AgCl core shell in the liquid electrolyte significantly helps to control the movement of Cu ions, which results in multistate resistive switching behavior. The core-shell IL soft memory device can open a gateway for electronic synapses.
人类大脑是最有效的计算和智能系统，研究人员正试图用固态材料来模拟人类大脑。然而，由于神经递质的移动，固态材料的使用存在局限性。因此，基于离子浓度极化机制，软记忆器件因其能实现顺畅的神经递质传递而受到极大关注。本文提出了一种用于电子突触的核壳结构软离子液体（IL）电阻式记忆器件，其采用具有多态电阻行为的Cu/Ag@AgCl/Cu结构。液体电解质中Ag@AgCl核壳结构的存在显著有助于控制铜离子的移动，从而导致多态电阻开关行为。核壳结构的IL软记忆器件可为电子突触打开一扇大门。
