Khan Sobia Ali, Kim Sungjun
School of Electronics Engineering, Chungbuk National University Cheongju 28644 South Korea.
Division of Electronics and Electrical Engineering, Dongguk University Seoul 04620 South Korea
RSC Adv. 2020 Aug 24;10(52):31342-31347. doi: 10.1039/d0ra06389d. eCollection 2020 Aug 21.
Diverse resistive switching behaviors are observed in the Pt/HfAlO /TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity. We extensively compare three types of resistive switching characteristics in a Pt/HfAlO /TiN device in terms of endurance, ON/OFF ratio, linear conductance update, and read margin in a cross-point array structure for synaptic device applications. The bipolar resistive switching under positive set and negative reset shows better linear synaptic weight updates due to gradual switching than the bipolar resistive switching at the opposite polarity. The complementary resistive switching shows a higher read margin due to the current suppression at a low voltage regime. In addition, the potentiation and the depression can be adjusted at the same voltage polarity for a hardware neuromorphic system. Finally, we demonstrate the transition between bipolar resistive switching and complementary resistive switching, which could provide flexibility for different applications.
根据顺从电流、扫描电压幅度和偏置极性，在Pt/HfAlO /TiN存储器件中观察到了多种电阻开关行为。我们在用于突触器件应用的交叉点阵列结构中，从耐久性、开/关比、线性电导更新和读取裕度方面，广泛比较了Pt/HfAlO /TiN器件中的三种电阻开关特性。与相反极性的双极电阻开关相比，正置位和负复位下的双极电阻开关由于逐渐开关而显示出更好的线性突触权重更新。互补电阻开关由于在低电压区域的电流抑制而显示出更高的读取裕度。此外，对于硬件神经形态系统，可以在相同的电压极性下调节增强和抑制。最后，我们展示了双极电阻开关和互补电阻开关之间的转变，这可以为不同应用提供灵活性。
