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硼烯制备变得简单。

Borophenes made easy.

作者信息

Cuxart Marc G, Seufert Knud, Chesnyak Valeria, Waqas Wajahat A, Robert Anton, Bocquet Marie-Laure, Duesberg Georg S, Sachdev Hermann, Auwärter Willi

机构信息

Physics Department E20, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany.

PASTEUR, Département de Chimie, École Normale Supérieure, PSL University, Sorbonne Université, CNRS, 75005 Paris, France.

出版信息

Sci Adv. 2021 Nov 5;7(45):eabk1490. doi: 10.1126/sciadv.abk1490. Epub 2021 Nov 3.

Abstract

To date, the scalable synthesis of elemental two-dimensional materials beyond graphene still remains elusive. Here, we introduce a versatile chemical vapor deposition (CVD) method to grow borophenes, as well as borophene heterostructures, by selectively using diborane originating from traceable byproducts of borazine. Specifically, metallic borophene polymorphs were successfully synthesized on Ir(111) and Cu(111) single-crystal substrates and conjointly with insulating hexagonal boron nitride (BN) to form atomically precise lateral borophene-BN interfaces or vertical van der Waals heterostructures. Thereby, borophene is protected from immediate oxidation by a single BN overlayer. The ability to synthesize high-quality borophenes with large single-crystalline domains in the micrometer scale by a straight-forward CVD approach opens up opportunities for the study of their fundamental properties and for device incorporation.

摘要

到目前为止,除石墨烯之外的元素二维材料的可扩展合成仍然难以实现。在此,我们引入了一种通用的化学气相沉积(CVD)方法,通过选择性地使用源自硼嗪可追溯副产物的乙硼烷来生长硼烯以及硼烯异质结构。具体而言,在 Ir(111) 和 Cu(111) 单晶衬底上成功合成了金属性硼烯多晶型物,并与绝缘的六方氮化硼(BN)结合,形成了原子精确的横向硼烯 - BN 界面或垂直范德华异质结构。由此,硼烯被单个 BN 覆盖层保护以免于立即氧化。通过一种直接的 CVD 方法合成具有微米级大单晶畴的高质量硼烯的能力,为研究其基本性质以及用于器件集成开辟了机会。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/060c/8565903/0950e951edbb/sciadv.abk1490-f1.jpg

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