Pandeya Ram Prakash, Shchukin Konstantin P, Falke Yannic, Mussler Gregor, Jalil Abdur Rehman, Atodiresei Nicolae, Hasdeo Eddwi H, Fedorov Alexander, Senkovskiy Boris V, Jansen Daniel, Di Santo Giovanni, Petaccia Luca, Grüneis Alexander
Institut für Festkörperelektronik, Technische Universität Wien, Gußhausstraße 25, 1040 Vienna, Austria.
II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, 50937 Köln, Germany.
Nano Lett. 2025 Jan 22;25(3):1220-1225. doi: 10.1021/acs.nanolett.4c06294. Epub 2025 Jan 13.
We synthesized and spectroscopically investigated monolayer (ML) C on the topological insulator (TI) BiTe. This C/BiTe heterostructure is characterized by an excellent translational order in a novel (4 × 4) C superstructure on a (9 × 9) cell of BiTe. Angle-resolved photoemission spectroscopy (ARPES) of C/BiTe reveals that ML C accepts electrons from the TI at room temperature, but no charge transfer occurs at low temperatures. This temperature-dependent doping is further investigated by Raman spectroscopy, photoluminescence (PL), and calculations of C/BiTe. At low temperatures, Raman spectroscopy and PL show a dramatic intensity increase of the C-related signal, suggesting a transition to a rotationally ordered state. Calculations explain the charge transfer by C adsorption to BiTe surface defects. The temperature dependence of the charge transfer is attributed to the orientational order of C. The electron affinity of C increases at low temperatures due to the freezing of the rotational motion.
我们合成并通过光谱研究了拓扑绝缘体(TI)BiTe上的单层(ML)C。这种C/BiTe异质结构的特征在于,在BiTe的(9×9)晶胞上的新型(4×4)C超结构中具有出色的平移有序性。C/BiTe的角分辨光电子能谱(ARPES)表明,室温下ML C从TI接受电子,但低温下不发生电荷转移。通过拉曼光谱、光致发光(PL)以及C/BiTe的计算对这种温度依赖性掺杂进行了进一步研究。在低温下,拉曼光谱和PL显示与C相关信号的强度急剧增加,表明向旋转有序状态的转变。计算解释了C吸附到BiTe表面缺陷导致的电荷转移。电荷转移的温度依赖性归因于C的取向有序性。由于旋转运动的冻结,C的电子亲和力在低温下增加。