Woo Gunhoo, Lee Dong Hyun, Heo Yeri, Kim Eungchul, On Sungmin, Kim Taesung, Yoo Hocheon
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, Korea.
Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Korea.
Adv Mater. 2022 Feb;34(6):e2107364. doi: 10.1002/adma.202107364. Epub 2021 Dec 22.
Metal oxide semiconductors are of great interest for enabling advanced photodetectors. However, operational instability and the absence of an appropriate doping technique hinder practical development and commercialization. Here, a strategy is proposed to dramatically increase the conventional photodetection performance, having superior stability in operational and environmental atmospheres. By performing energy-band engineering through an octadecylphosphonic acid (ODPA) self-assembled-monolayer-based doping treatment, the proposed indium-gallium-zinc oxide (IGZO)/p-Si heterointerface devices exhibit greatly enhance the photoresponsive characteristics, including a photoswitching current ratio with a 100-fold increase, and photoresponsivity and detectivity with a 15-fold increase each. The observed ODPA doping effects are investigated through comprehensive analysis with X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). Furthermore, the proposed photodetectors, fabricated at a 4 in. wafer scale, demonstrate its excellent operation robustness with consistent performance over 237 days and 20 000 testing cycles.
金属氧化物半导体对于实现先进的光电探测器具有重大意义。然而，操作不稳定性以及缺乏合适的掺杂技术阻碍了其实际发展和商业化。在此，我们提出了一种策略，以显著提高传统光电探测性能，使其在操作和环境气氛中具有卓越的稳定性。通过基于十八烷基膦酸（ODPA）自组装单分子层的掺杂处理进行能带工程，所提出的铟镓锌氧化物（IGZO）/p - 硅异质结器件展现出大大增强的光响应特性，包括光开关电流比增加100倍，光响应度和探测率各增加15倍。通过利用X射线光电子能谱（XPS）、原子力显微镜（AFM）和开尔文探针力显微镜（KPFM）进行综合分析，研究了观察到的ODPA掺杂效应。此外，所提出的光电探测器在4英寸晶圆规模上制造，在237天和20000次测试循环中表现出一致的性能，证明了其出色的操作稳健性。
