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具有内置 Mie 共振的范德瓦尔斯异质结构用于偏振敏感光电探测。

Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection.

机构信息

Institute of Nanophotonics, Jinan University, Guangzhou, 511443, P. R. China.

Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China.

出版信息

Adv Sci (Weinh). 2023 Mar;10(9):e2207022. doi: 10.1002/advs.202207022. Epub 2023 Jan 22.

Abstract

Few-layer transition metal dichalcogenides (TMDs) and their combination as van der Waals heterostructures provide a promising platform for high-performance optoelectronic devices. However, the ultrathin thickness of TMD flakes limits efficient light trapping and absorption, which triggers the hybrid construction with optical resonant cavities for enhanced light absorption. The optical structure enriched photodetectors can also be wavelength- and polarization-sensitive but require complicated fabrication. Herein, a new-type TMD-based photodetector embedded with nanoslits is proposed to enhance light trapping. Taking ReS as an example, strong anisotropic Mie-type optical responses arising from the intrinsic in-plane anisotropy and nanoslit-enhanced anisotropy are discovered. Owing to the nanoslit-enhanced optical resonances and band engineering, excellent photodetection performances are demonstrated with high responsivity of 27 A W and short rise/decay times of 3.7/3.7 ms. More importantly, through controlling the angle between the nanoslit orientation and the polarization direction to excite different resonant modes, polarization-sensitive photodetectors with anisotropy ratios from 5.9 to 12.6 can be achieved, representing one of the most polarization-sensitive TMD-based photodetectors. The depth and orientation of nanoslits are demonstrated crucial for optimizing the anisotropy ratio. The findings bring an effective scheme to construct high-performance and polarization-sensitive photodetectors.

摘要

少层过渡金属二卤化物(TMDs)及其范德华异质结构组合为高性能光电设备提供了一个很有前途的平台。然而,TMD 薄片的超薄厚度限制了有效的光捕获和吸收,这引发了与光学共振腔的混合结构,以增强光吸收。丰富的光学结构的光电探测器也可以对波长和偏振敏感,但需要复杂的制造。在此,提出了一种嵌入纳米狭缝的新型 TMD 基光电探测器,以增强光捕获。以 ReS 为例,由于固有面内各向异性和纳米狭缝增强的各向异性,发现了强各向异性 Mie 型光响应。由于纳米狭缝增强的光学共振和能带工程,展示了出色的光电探测性能,具有 27 A W 的高响应率和 3.7/3.7 ms 的短上升/下降时间。更重要的是,通过控制纳米狭缝取向与偏振方向之间的角度来激发不同的共振模式,可以实现从 5.9 到 12.6 的各向异性比的偏振敏感光电探测器,这是基于 TMD 的光电探测器中最敏感的偏振之一。纳米狭缝的深度和方向被证明对优化各向异性比至关重要。研究结果为构建高性能和偏振敏感光电探测器提供了一种有效的方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8907/10037953/8a373efcddde/ADVS-10-2207022-g005.jpg

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