Fan Yexin, Song Ying, Xu Zongwei, Wu Jintong, Zhu Rui, Li Qiang, Fang Fengzhou
State Key Laboratory of Precision Measuring Technology & Instruments, Laboratory of Micro/Nano Manufacturing Technology, Tianjin University, Tianjin 300072, People's Republic of China.
State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, People's Republic of China.
Nanotechnology. 2021 Dec 24;33(12). doi: 10.1088/1361-6528/ac40c1.
Molecular dynamics simulation is adopted to discover the formation mechanism of silicon vacancy color center and to study the damage evolution in 4H-SiC during helium ion implantation with different annealing temperatures. The number and distribution of silicon vacancy color centers during He ion implantation can be more accurately simulated by introducing the ionization energy loss during implantation. A new method for numerical statistic of silicon vacancy color centers is proposed, which takes into account the structure around the color centers and makes statistical results more accurate than the Wigner-Seitz defect analysis method. Meanwhile, the photoluminescence spectra of silicon vacancy color centers at different helium ion doses are characterized to verify the correctness of the numerical analysis. The new silicon vacancy color center identification method can help predicting the optimal annealing temperature for silicon vacancy color centers, and provide guidance for subsequent color center annealing experiments.
采用分子动力学模拟来揭示硅空位色心的形成机制，并研究不同退火温度下氦离子注入4H-SiC过程中的损伤演化。通过引入注入过程中的电离能损失，可以更准确地模拟氦离子注入过程中硅空位色心的数量和分布。提出了一种新的硅空位色心数值统计方法，该方法考虑了色心周围的结构，使统计结果比维格纳-赛茨缺陷分析方法更准确。同时，对不同氦离子剂量下硅空位色心的光致发光光谱进行了表征，以验证数值分析的正确性。新的硅空位色心识别方法有助于预测硅空位色心的最佳退火温度，并为后续的色心退火实验提供指导。
