Bonvalot Marceline, Vallée Christophe, Mannequin Cédric, Jaffal Moustapha, Gassilloud Rémy, Possémé Nicolas, Chevolleau Thierry
University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France.
Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
Dalton Trans. 2022 Jan 4;51(2):442-450. doi: 10.1039/d1dt03456a.
Area selective deposition (ASD) is a bottom-up process leading to a uniform deposition in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever the strategy used to develop selective deposition by atomic layer deposition, there always comes a time when selectivity becomes defective and growth in undesired substrate areas must be corrected. This leads to the design of ASD by super-cycle alternating deposition and etch. Recent examples from the literature show a great diversity in the design of the etching step and indicate that the optimization of selective deposition by super-cycles is only possible through a careful optimization of the etching step parameters (chemistry, frequency, duration, .). In this paper, we discuss how to optimize this step and we show that different approaches can be developed to optimize the overall ASD process throughput, while simultaneously limiting process drift and contamination. We also show that complementary selective properties can prove a valuable leverage enabling ASD processes based on super-cycles, such as structure selective deposition, whereby a difference in thin film morphology in growth and non-growth areas can be smartly taken advantage of during the etching step.
区域选择性沉积（ASD）是一种自下而上的工艺，可在图案化衬底的仅期望区域实现均匀沉积，避免使用光刻进行图案化。然而，无论采用何种策略通过原子层沉积来实现选择性沉积，总会有这样一个时刻，即选择性出现缺陷，必须纠正不期望的衬底区域中的生长。这导致了通过超循环交替沉积和蚀刻来设计ASD。文献中的近期示例表明蚀刻步骤的设计具有很大的多样性，并表明只有通过仔细优化蚀刻步骤参数（化学性质、频率、持续时间等），才能通过超循环实现选择性沉积的优化。在本文中，我们讨论了如何优化这一步骤，并表明可以开发不同的方法来优化整体ASD工艺的吞吐量，同时限制工艺漂移和污染。我们还表明，互补的选择性特性可证明是一种有价值的手段，能够实现基于超循环的ASD工艺，例如结构选择性沉积，由此在蚀刻步骤期间可以巧妙地利用生长区域和非生长区域中薄膜形态的差异。
