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解读基于环保型ZnSeTe的量子点的超快载流子动力学:迈向高质量蓝绿色发光体

Deciphering Ultrafast Carrier Dynamics of Eco-Friendly ZnSeTe-Based Quantum Dots: Toward High-Quality Blue-Green Emitters.

作者信息

Huang Zhigao, Sun Qi, Zhao Shuangyi, Wu Baoqiang, Zhang Mingshui, Zang Zhigang, Wang Yue

机构信息

MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.

Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing 400044, People's Republic of China.

出版信息

J Phys Chem Lett. 2021 Dec 16;12(49):11931-11938. doi: 10.1021/acs.jpclett.1c03478. Epub 2021 Dec 8.

DOI:10.1021/acs.jpclett.1c03478
PMID:34878791
Abstract

Developing non-toxic and high-performance colloidal semiconductor quantum dots (CQDs) represents the inevitable route toward CQD-enabled technologies. Herein, the spectral and dynamic properties of heavy-metal-free ZnSeTe-based CQDs are investigated by transient absorption spectroscopy and theoretical modeling. We for the first time decode the ultrafast hot carrier trapping (<2 ps) and band-edge carrier trapping processes (∼6 ps) in the CQD system, which plagues the emission performance. The ZnSe/ZnSeS/ZnS shell engineering greatly suppresses the non-radiative trapping process and results in a high photoluminescence quantum yield of 88%. We demonstrate that the core/shell nano-heterostructure forms the quasi-type II configuration, in contrast to the presumed type I counterpart. Moreover, the Auger recombination and hot carrier cooling processes are revealed to be ∼454-405 ps and 160-370 fs, respectively, and their relationship with the composition in the spectral range of 470-525 nm is clarified. The above merits render these ZnSeTe CQDs as outstanding blue-green emitters for optoelectronic applications, exemplified by the white light-emitting diodes.

摘要

开发无毒且高性能的胶体半导体量子点(CQD)是实现基于CQD的技术的必由之路。在此,通过瞬态吸收光谱和理论建模研究了无重金属的ZnSeTe基CQD的光谱和动力学性质。我们首次解析了CQD系统中困扰发光性能的超快热载流子捕获(<2皮秒)和带边载流子捕获过程(约6皮秒)。ZnSe/ZnSeS/ZnS壳层工程极大地抑制了非辐射捕获过程,并导致了88%的高光致发光量子产率。我们证明,与假定的I型对应物相比,核/壳纳米异质结构形成了准II型构型。此外,俄歇复合和热载流子冷却过程分别被揭示为约454-405皮秒和160-370飞秒,并且阐明了它们在470-525纳米光谱范围内与组成的关系。上述优点使这些ZnSeTe CQD成为用于光电子应用的出色蓝绿色发光体,以白色发光二极管为例。

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