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直接带隙双钙钛矿系列CsLiInX(X = F、Cl和Br)的第一性原理研究

First-Principles Study on the Direct Bandgap Double Perovskite Series CsLiInX(X = F, Cl, and Br).

作者信息

Luo Jiaolian, Yang Anqi, Xie Zhenyu

机构信息

School of Materials Science and Engineering, Guizhou Minzu University, Guiyang 550025, China.

Special and Key Laboratory of Guizhou Provincial Higher Education for Green Energy-Saving Materials, Guiyang 550025, China.

出版信息

ACS Omega. 2021 Nov 22;6(48):32408-32416. doi: 10.1021/acsomega.1c03342. eCollection 2021 Dec 7.

Abstract

A molecular crystal structure model of the lead-free halide chalcogenide semiconductor CsLiInX (X = F, Cl, and Br) was established, and its energy band, density of states, optical properties, and thermodynamic properties were calculated using the first nature principle and the effect of different pressures on the bandgap of CsLiInX (X = F and Cl, CsLiInF with a bandgap of 7.359 eV, CsLiInCl with a bandgap of 5.098 eV, and CsLiInBr with a bandgap of 3.755 eV). The absorption of light is mainly due to the transition of halide ions from p- to s-orbitals. The p- and In-s orbitals of halide ions play a major role in light harvesting. CsLiInCl has low sensitivity to relative pressure and is stable at a 0-100 GPa pressure. In the structure of CsLiInX (X = F, Cl, and Br), changing the halogen atom can effectively improve its optical properties. CsLiInCl and CsLiInF are considered as the most promising candidates for UV detectors. CsLiInF has a large forbidden band width and a high Debye temperature and shows a high photoluminescence quantum yield in the field of phosphors with great potential in the field of phosphors with high photoluminescence quantum yields. This study is a positive reference for the preparation of lead-free chalcogenide-type ultraviolet detectors with excellent performance.

摘要

建立了无铅卤化物硫族化物半导体CsLiInX(X = F、Cl和Br)的分子晶体结构模型,并使用第一性原理计算了其能带、态密度、光学性质和热力学性质,以及不同压力对CsLiInX(X = F和Cl,CsLiInF的带隙为7.359 eV,CsLiInCl的带隙为5.098 eV,CsLiInBr的带隙为3.755 eV)带隙的影响。光吸收主要归因于卤离子从p轨道到s轨道的跃迁。卤离子的p轨道和In的s轨道在光捕获中起主要作用。CsLiInCl对相对压力的敏感性较低,在0 - 100 GPa压力下稳定。在CsLiInX(X = F、Cl和Br)的结构中,改变卤原子可以有效改善其光学性质。CsLiInCl和CsLiInF被认为是最有前途的紫外探测器候选材料。CsLiInF具有较大的禁带宽度和较高的德拜温度,在具有高光致发光量子产率的磷光体领域显示出高光致发光量子产率,具有很大潜力。本研究为制备性能优异的无铅硫族化物型紫外探测器提供了积极参考。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/20d1/8655770/383d9d4e7b3f/ao1c03342_0002.jpg

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