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硒化锡中的光致超快对称性转变

Photoinduced Ultrafast Symmetry Switch in SnSe.

作者信息

Han Yadong, Yu Junhong, Zhang Hang, Xu Fang, Peng Kunlin, Zhou Xiaoyuan, Qiao Liang, Misochko Oleg V, Nakamura Kazutaka G, Vanacore Giovanni M, Hu Jianbo

机构信息

State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China.

Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, 621900, China.

出版信息

J Phys Chem Lett. 2022 Jan 20;13(2):442-448. doi: 10.1021/acs.jpclett.1c03704. Epub 2022 Jan 6.

DOI:10.1021/acs.jpclett.1c03704
PMID:34990128
Abstract

Layered tin selenide (SnSe) has recently emerged as a high-performance thermoelectric material with the current record for the figure of merit () observed in the high-temperature phase. So far, access to the phase has been mainly obtained via thermal equilibrium methods based on sample heating or application of external pressure, thus restricting the current understanding only to ground-state conditions. Here, we investigate the ultrafast carrier and phononic dynamics in SnSe. Our results demonstrate that optical excitations can transiently switch the point-group symmetry of the crystal from to at room temperature in a few hundreds of femtoseconds with an ultralow threshold for the excitation carrier density. This nonequilibrium phase is found to be driven by the displacive excitation of coherent A phonons and, given the absence of low-energy thermal phonons, exists in SnSe with the status of 'cold lattice with hot carriers'. Our findings provide an important insight for understanding the nonequilibrium thermoelectric properties of SnSe.

摘要

层状硒化锡(SnSe)最近已成为一种高性能热电材料,在高温相中的优值()创下了当前记录。到目前为止,获得相主要是通过基于样品加热或施加外部压力的热平衡方法,因此目前的认识仅限于基态条件。在这里,我们研究了SnSe中的超快载流子和声子动力学。我们的结果表明,光激发可以在室温下在几百飞秒内以超低的激发载流子密度阈值将晶体的点群对称性从瞬态切换到。发现这种非平衡相是由相干A声子的位移激发驱动的,并且由于不存在低能热声子,在SnSe中以“热载流子冷晶格”的状态存在。我们的发现为理解SnSe的非平衡热电性质提供了重要的见解。

相似文献

1
Photoinduced Ultrafast Symmetry Switch in SnSe.硒化锡中的光致超快对称性转变
J Phys Chem Lett. 2022 Jan 20;13(2):442-448. doi: 10.1021/acs.jpclett.1c03704. Epub 2022 Jan 6.
2
Layered Tin Chalcogenides SnS and SnSe: Lattice Thermal Conductivity Benchmarks and Thermoelectric Figure of Merit.层状锡硫属化合物SnS和SnSe:晶格热导率基准及热电优值
J Phys Chem C Nanomater Interfaces. 2022 Aug 25;126(33):14036-14046. doi: 10.1021/acs.jpcc.2c02401. Epub 2022 Aug 16.
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Enhanced Room-Temperature Thermoelectric Performance of 2D-SnSe Alloys via Electric-Current-Assisted Sintering.通过电流辅助烧结提高二维SnSe合金的室温热电性能
Materials (Basel). 2023 Jan 5;16(2):509. doi: 10.3390/ma16020509.
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Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe.完全致密单晶SnSe的热电优值
ACS Omega. 2019 Mar 19;4(3):5442-5450. doi: 10.1021/acsomega.8b03323. eCollection 2019 Mar 31.
5
Anharmonicity in the High-Temperature Cmcm Phase of SnSe: Soft Modes and Three-Phonon Interactions.SnSe高温Cmcm相中的非简谐性:软模与三声子相互作用
Phys Rev Lett. 2016 Aug 12;117(7):075502. doi: 10.1103/PhysRevLett.117.075502. Epub 2016 Aug 10.
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Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals.SnSe 晶体的超低热导率和高热电优值。
Nature. 2014 Apr 17;508(7496):373-7. doi: 10.1038/nature13184.
7
Full Thermoelectric Characterization of Stoichiometric Electrodeposited Thin Film Tin Selenide (SnSe).化学计量比电沉积薄膜硒化锡(SnSe)的完整热电特性研究
ACS Appl Mater Interfaces. 2020 Jun 24;12(25):28232-28238. doi: 10.1021/acsami.0c06026. Epub 2020 Jun 12.
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Enhanced power factor via the control of structural phase transition in SnSe.通过控制 SnSe 的结构相变来提高功率因数。
Sci Rep. 2016 May 19;6:26193. doi: 10.1038/srep26193.
9
Thin Film Tin Selenide (SnSe) Thermoelectric Generators Exhibiting Ultralow Thermal Conductivity.薄膜硒化锡(SnSe)热电发电机具有超低热导率。
Adv Mater. 2018 Aug;30(31):e1801357. doi: 10.1002/adma.201801357. Epub 2018 Jun 21.
10
First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications.用于热电应用的π-SnSe的结构、光电和热物理性质的第一性原理研究
Beilstein J Nanotechnol. 2021 Oct 5;12:1101-1114. doi: 10.3762/bjnano.12.82. eCollection 2021.

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