Wei Pai-Chun, Bhattacharya Sriparna, Liu Yu-Fei, Liu Fengjiao, He Jian, Tung Yung-Hsiang, Yang Chun-Chuen, Hsing Cheng-Rong, Nguyen Duc-Long, Wei Ching-Ming, Chou Mei-Yin, Lai Yen-Chung, Hung Tsu-Lien, Guan Syu-You, Chang Chia-Seng, Wu Hsin-Jay, Lee Chi-Hung, Li Wen-Hsien, Hermann Raphael P, Chen Yang-Yuan, Rao Apparao M
Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, Republic of China.
Computer, Electrical, and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
ACS Omega. 2019 Mar 19;4(3):5442-5450. doi: 10.1021/acsomega.8b03323. eCollection 2019 Mar 31.
Single-crystalline SnSe has attracted much attention because of its record high figure-of-merit ≈ 2.6; however, this high has been associated with the low mass density of samples which leaves the intrinsic of fully dense pristine SnSe in question. To this end, we prepared high-quality fully dense SnSe single crystals and performed detailed structural, electrical, and thermal transport measurements over a wide temperature range along the major crystallographic directions. Our single crystals were fully dense and of high purity as confirmed via high statistics Sn Mössbauer spectroscopy that revealed <0.35 at. % Sn(IV) in pristine SnSe. The temperature-dependent heat capacity ( ) provided evidence for the displacive second-order phase transition from to phase at ≈ 800 K and a small but finite Sommerfeld coefficient γ which implied the presence of a finite Fermi surface. Interestingly, despite its strongly temperature-dependent band gap inferred from density functional theory calculations, SnSe behaves like a low-carrier-concentration multiband metal below 600 K, above which it exhibits a semiconducting behavior. Notably, our high-quality single-crystalline SnSe exhibits a thermoelectric figure-of-merit ∼1.0, ∼0.8, and ∼0.25 at 850 K along the , , and directions, respectively.
单晶SnSe因其创纪录的高优值(约为2.6)而备受关注;然而,这种高优值与样品的低质量密度有关,这使得完全致密的原始SnSe的本征优值受到质疑。为此,我们制备了高质量的完全致密的SnSe单晶,并在很宽的温度范围内沿主要晶体学方向进行了详细的结构、电学和热输运测量。通过高统计量的Sn穆斯堡尔光谱证实,我们的单晶完全致密且纯度高,该光谱显示原始SnSe中Sn(IV)的含量<0.35原子%。温度依赖的热容( )为在约800 K时从 相到 相的位移型二级相变以及一个小但有限的索末菲系数γ提供了证据,这意味着存在有限的费米面。有趣的是,尽管从密度泛函理论计算推断其带隙强烈依赖于温度,但SnSe在600 K以下表现得像低载流子浓度的多带金属,在600 K以上则表现出半导体行为。值得注意的是,我们高质量的单晶SnSe在850 K时沿 、 和 方向的热电优值分别约为1.0、约为0.8和约为0.25。