Wan Yi, Fu Jui-Han, Chuu Chih-Piao, Tung Vincent, Shi Yumeng, Li Lain-Jong
International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong.
Chem Soc Rev. 2022 Feb 7;51(3):803-811. doi: 10.1039/d1cs00264c.
Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors-including crystal/substrate symmetry and energy consideration-necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.
二维（2D）层状材料因其独特的光学和电学特性，在硅基后纳米电子学领域具有巨大潜力。在过去十年中，二维纳米电子学的器件制造和合成路线取得了重大进展；然而，尽管最近的实验演示取得了巨大进展，但阻碍它们立即应用的一个主要瓶颈是缺乏一种可重复的方法来生长晶圆级单晶薄膜。在本教程综述中，我们系统总结了合成单取向二维层所需的关键因素，包括晶体/衬底对称性和能量考虑。特别是，我们重点讨论了原子边缘引导的外延生长，它有助于单晶二维层在晶圆级生长时的单向成核。
