Bayram Ferhat, Gajula Durga, Khan Digangana, Koley Goutam
Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, SC 29634 USA.
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA.
Microsyst Nanoeng. 2022 Jan 24;8:8. doi: 10.1038/s41378-021-00330-6. eCollection 2022.
Nonlinear oscillations in micro- and nanoelectromechanical systems have emerged as an exciting research area in recent years due to their promise in realizing low-power, scalable, and reconfigurable mechanical memory and logic devices. Here, we report ultralow-power mechanical memory operations utilizing the nonlinear oscillation regime of GaN microcantilevers with embedded piezotransistive AlGaN/GaN heterostructure field effect transistors as highly sensitive deflection transducers. Switching between the high and low oscillatory states of the nonlinear oscillation regime was demonstrated using a novel phase-controlled opto-mechanical excitation setup, utilizing a piezo actuator and a pulsed laser as the primary and secondary excitation sources, respectively. Laser-based photoacoustic excitation was amplified through plasmonic absorption in Au nanoparticles deposited on a transistor. Thus, the minimum switching energy required for reliable memory operations was reduced to less than a picojoule (pJ), which translates to one of the lowest ever reported, when normalized for mass.
近年来,微纳机电系统中的非线性振荡因其在实现低功耗、可扩展和可重构机械存储器及逻辑器件方面的潜力,已成为一个令人兴奋的研究领域。在此,我们报告了利用具有嵌入式压阻式AlGaN/GaN异质结构场效应晶体管作为高灵敏度偏转传感器的GaN微悬臂梁的非线性振荡状态进行的超低功耗机械存储操作。使用一种新颖的相位控制光机械激发装置,分别利用压电致动器和脉冲激光作为主要和次要激发源,演示了在非线性振荡状态的高振荡状态和低振荡状态之间的切换。基于激光的光声激发通过沉积在晶体管上的金纳米颗粒中的等离子体吸收得到放大。因此,可靠的存储操作所需的最小切换能量降低到小于一皮焦耳(pJ),按质量归一化后,这是有史以来报道的最低值之一。