Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, 20133, Milano, MI, Italy.
Adv Mater. 2013 Nov 6;25(41):5975-80. doi: 10.1002/adma.201301940. Epub 2013 Aug 15.
Memristors, namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase-change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse-induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low-power and high-speed switching.
忆阻器，即能够根据施加的电刺激改变其电阻的滞后器件，由于其可扩展的尺寸、低切换能量和非易失性，可能为未来的记忆和计算提供新的机会。我们已经开发出了一套功能齐全的逻辑功能，包括 NOR、NAND 和 NOT 门，每个门都使用单个相变忆阻器 (PCM)，其电阻切换是由于活性硫族化物材料的相转变引起的。逻辑操作是通过纳米级相变的高功能来实现的，具有电压比较、添加结晶和脉冲诱导非晶化。忆阻状态的非易失性为开发具有低功耗和高速开关的可重构混合逻辑/存储电路提供了基础。
